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专利名称：BiHEMT device having a stacked parating
layer
我最难忘的一件事发明人：Yu-Chung Chin,Chao-Hsing Huang
申请号：US13910241
申请日：20130605
综合行政执法公开号：US08994069B2
公开日：
20150331
专利内容由知识产权出版社提供
专利附图：
摘要：A high electron mobility bipolar transistor including a substrate, a
pudomorphic high electron mobility transistor (pHEMT) sub structure, a sub
collector/parating layer and a heterojunction bipolar transistor (HBT) sub structure贡菜热量
家长会教案>合并单元格排序quentially stacked from bottom to top is disclod. The sub collector/parating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub
collector/parating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/parating layer is within 5×10cmand 1×10cm, and/or the oxygen concentration within 5×10cmand 1×10cm. The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increa, and sustaining the stability of the manufacturing process.
普宁豆干
申请人：Visual Photonics Epitaxy Co., Ltd.
地址：Taoyuan TW
无病毒国籍：TW
代理机构：Lin & Associates IP, Inc
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