专利名称：MANUFACUTRE OF SEMICONDUCTOR DEVICE
发明人：NAKAYAMA RYOZO
申请号：JP22583786
申请日：19860926伍佰歌曲下载
红楼梦原版公开号：JPS6381832A
公开日：
食管反流治疗
19880412
专利内容由知识产权出版社提供
摘要：PURPOSE:To make possible a fine formation and to obtain a high-breakdown strength element isolation by a method wherein a recesd part is formed in the center of a field oxide film forming region and a channel stopper layer is formed weaker its concentration near a diffud layer and stronger its concentration under the lower part of the recesd part. CONSTITUTION:An Si substrate 1 is etched to form a recesd part. Thereafter, a channel stopper layer 7 is formed using a photo resist 5 as a mask. Thereafter, the photo resist 5 is removed by an O2 lasher method and thereafter, a field oxide film 8 is formed in a thickness of about 0.7 mum or thereabouts by a thermal oxidation method using an SiN film 3 as a mask. At this time, as oxidation proceeds from the right and left in the recesd part, the field oxide film is formed in a thickness of about 1.2 mum or thereabouts only at the parts. After that, the SiN film 3 is removed. After that, a miconductor device is formed by well-known techniques. Thereby, as a field inver voltage (breakdown strength) can be independently t at an arbitrary value by a cond channel stopper layer under the recesd part, the concentration of a first channel stopper layer coming into contact to a diffud layer can be made weaker and the breakdown strength can be enhanced. Moreover, as the recesd part and the
劝说的近义词
英语属于什么学科cond channel stopper layer can be formed in a lf- matching manner to the SiN film, the process is not complicated and a fine formation becomes easier.
各种茶的作用与功效申请人：TOSHIBA CORP
广东春季高考
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