衣服上的霉点怎么去除>甜蜜文案>金典有机奶广告梦到唱歌专利名称：Multi-step, in-situ pad conditioning system
and method for chemical mechanical
planarization
发明人：Stephen J. Benner
申请号：US11042998
申请日：20050125
公开号：US07040967B2墙用英语怎么说
公开日：
20060509
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专利附图：
摘要：An arrangement for performing a multi-step polishing process on a single stage chemical mechanical planarization (CMP) apparatus utilizes an in-situ conditioning
operation to continuously clean and evacuate debris and spent polishing slurry from the surface of the polishing pad. By prenting a clean, virtually “new” polishing pad surface at the beginning of each planarization cycle, polishing agents of different chemistries, morphologies, temperatures, etc. may be ud without the need to remove the wafer to change the polishing source or transfer the wafer to another CMP polishing station. A multi-positional valve may be ud to control the introduction of various process fluids, including a variety of different polishing slurries and conditioning/flushing agents. The u of different conditioning materials allows for the surface of the polishing pad to be altered for different process conditions (e.g., neutralizing prior polishing chemicals, modifying the surface temperature of the pad to control polishing rate, u of surfactants to dislodge particles that become attracted to the pad surface, etc.).
申请人：Stephen J. Benner
地址：Lansdale PA US
国籍：US
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