1
V RRM Cathode-to-Anode Voltage 600V I F(AV)Continuous Forward Current 4
A
T C = 100°C
I FSM Single Pul Forward Current 25I FRM Peak Repetitive Forward Current 16
T C = 116°C
P D Maximum Power Dissipation 10
蓝色英语怎么读W
T C = 100°C足球赛前热身
T J , T STG
Operating Junction and Storage Temperatures
彩泥蛋糕- 55 to 150
°C
Parameters
Max
Units
HFA04SD60S
Bulletin PD-20617 rev. B 07/02
t rr = 38ns I F(AV) = 4Amp V R = 600V
Features
Description/ Applications
Absolute Maximum Ratings
Ultrafast, Soft Recovery Diode
•Ultrafast Recovery Time •Ultrasoft Recovery •Very Low I RRM •Very Low Q rr
•Guaranteed Avalanche
•
Specified at Operating Temperature
D - PAK
Package Outline
The diodes are optimized to reduce loss and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. The devices are ideally suited for freewheeling,flyback, power converters, motor drives, and other applications where high speed and reduced switching loss are design requirements.
Benefits
•Reduced RFI and EMI
•Reduced Power Loss in Diode and Switching Transistor
•Higher Frequency Operation •Reduced Snubbing •Reduced Parts Count
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HFA04SD60S
Bulletin PD-20617 rev. B 07/02
t rr
Rever Recovery Time
-17-ns
I F = 1.0A, di F /dt = 200A/µA, V R = 30V -2842T J = 25°C -3857T J = 125°C I RRM Peak Recovery Current - 2.9 5.2A T J = 25°C -
3.7 6.7T J = 125°C Q rr Rever Recovery Charge -4060nC T J = 25°C -
70105T J = 125°C di (rec)M /dt Rate of Fall of recovery Current
-280-T J = 25°C -
235
-T J = 125°C
V BR , V r Breakdown Voltage,600--V I R = 100µA Blocking Voltage V F
重庆酸辣粉
Forward Voltage - 1.5 1.8V I F = 4A See Fig. 1
- 1.8 2.2V I F = 8A
诗篇第一篇- 1.4 1.7V I F = 4A, T J = 125°C I R Max. Rever Leakage Current -0.17 3.0µA V R = V R Rated
-
44300µA T J = 125°C, V R = 0.8 x V R Rated C T Junction Capacitance -48pF V R = 200V
L S
Series Inductance
-
8.0
-nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T J = 25°C (unless otherwi specified)
Parameters
Dynamic Recovery Characteristics @ T J = 25°C (unless otherwi specified)
I F = 4A V R = 200V
di F /dt = 200A/µs
Parameters蒜蓉茄子
Min
Typ
Max
Units
T J Max. Junction Temperature Range -- - 55 to 150 °C
T Stg Max. Storage Temperature Range -- - 55 to 150T S Soldering Temperature, 10 c --240R thJC Thermal Resistance, Junction to Ca -- 5.0°C/ W
R thJA Thermal Resistance, Junction to Ambient --80Wt
Weight
- 2.0-g -
0.07-(oz)T Mounting Torque 6.0-12Kg*cm 5.0
-
10
lbf*in
Thermal - Mechanical Characteristics
!!
Typical Socket Mount
Min Typ Max Units Test Conditions
Parameters
水果英语单词Min Typ Max Units Test Conditions
A/µs
Bulletin PD-20617 rev. B 07/02
3
HFA04SD60S
HFA04SD60S
Bulletin PD-20617 rev. B 07/02 Array
Bulletin PD-20617 rev. B 07/02
牛奶加可乐
5
HFA04SD60S