专利名称：Controlled process and resulting device像天堂的悬崖mv
shizizuo
局域网共享文件发明人：Francois J. Henley,Nathan Cheung
申请号：US13743303
申请日：20130116
公开号：US08835282B2
公开日：
书单20140916
专利内容由知识产权出版社提供
专利附图：
摘要：A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-
material donor substrate to a lected depth within the single crystal silicon. The method
销售法则
includes providing energy to a lected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
申请人：Silicon Genesis Corporation
地址：San Jo CA US
咸肉的腌制方法国籍：US
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