Power MOSFET Technical Training学风口号
Datasheet Overview
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Giovanni Privitera
Senior Product Engineer
MOSFET & IGBT DIVISION
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Maximum Ratings Reprent the extreme capability of the devices.To be ud as worst conditions (single parameter) that the design should guarantee will not be exceeded. [only VDS & VDGR may be exceeded in limited avalanche conditions]Never exceed !!!!!!!!!!!!
The avalanche breakdown voltage of ST’s PowerMOSFET is always higher than its voltage rating due to normal production process margins.
In order to achieve high forecasted reliability the worst ca operating
voltage should be lower than the maximum one. The maximum voltage
during turn off should not exceed 70 to 90% of the rated voltage. This
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derating is suggested by the years of experience.For the Drain-Gate Voltage capability
(Rgs to avoid floating gate)
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Exceeding Vgs may result in permanent device degradation due to
oxide breakdown and dielectric rupture.
The real oxide breakdown capability is higher than this value, and is related to the oxide thickness; but this value, with a reasonable guardband, is the 100% TESTED & warranted one
更改电脑密码Tj must be always lower than 150ºC Reflects a minimum device rvice lifetime.Operation at conditions that guarantee
a junction temperature less than Tjmax may enhance long term operating life.
男子名字Ptot=dT/Rthjc=(150-25)/Rthjc
derating=1/Rthjc The majority of reliability tests are done at maximum junction temperature, especially the HTRB (High Temperature Reverd Bias) and HTFB (High Temperature Forward Bias). The test results are ud as input information for calculation of acceleration factors in different reliability models. In order to achieve high forecasted reliability the maximum operating temperature should be lower than the maximum one. For example, by theoretical models, reducing the junction temperature by 30°C will improve the MTBF (Mean Time Between Failure) of the MOSFET by an order of magnitude.
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