事事顺意专利名称：Method for improving ash rate uniformity in
photoresist ashing process equipment
发明人：Timothy J. Hogan,Timothy A. Taylor
功亏一篑的篑
申请号：US10928683
申请日：20040826社会调查研究
幼儿早教公开号：US20050026436A1
水果卡公开日：
20050203
专利内容由知识产权出版社提供
专利附图：
摘要：A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated梦秋
circuits and micro-electro-mechanical devices. A varying gap distance from the edge-to-center of the upper and lower grid plates, and of a plasma ashing machine is provided to allow additional flow of p
lasma gas into the normally mi-stagnated area near the center of the wafer being procesd. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the
invention is described, including both stepwi and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate asmbly.
天津简称申请人：Timothy J. Hogan,Timothy A. Taylor
地址：Allen TX US,Sach TX US 国籍：US,US勿忘国耻吾辈自强
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