May 2011
吃水果
©2011 Fairchild Semiconductor Corporation
墨鱼怎么吃1FDMS7698 N-Channel PowerTrench ® MOSFET
G S
S S D
D D
D
5678
321
4Bottom
Power 56
Top
Pin 1G
元宵节的来历简写
S
S
S D
D
D
D
FDMS7698
N-Channel PowerTrench ® MOSFET
30 V, 22 A, 10 m ΩFeatures
Max r DS(on) = 10 m Ω at V GS = 10 V, I D = 13.5 A Max r DS(on) = 15 m Ω at V GS = 4.5 V, I D = 11.0 A
Advanced Package and Silicon combination for low r DS(on)and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode rever recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and rver OringFET / Load Switching DC-DC Conversion
MOSFET Maximum Ratings T A = 25 °C unless otherwi noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter
Ratings Units V DS Drain to Source Voltage
30V V GS Gate to Source Voltage (Note 4)±20V
I D Drain Current -Continuous (Package limited) T C = 25 °C 22A -Continuous (Silicon limited) T C = 25 °C
44 -Continuous T A = 25 °C (Note 1a)13.5 -Puld
50E AS Single Pul Avalanche Energy (Note 3)29mJ P D Power Dissipation T C = 25 °C
29W Power Dissipation T A = 25 °C (Note 1a) 2.5T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C R θJC Thermal Resistance, Junction to Ca
4.4°C/W
R θJA
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking Device Package Reel Size Tape Width Quantity FDMS7698
FDMS7698
Power 56
13 ’’
12 mm
3000 units
FDMS7698 N-Channel PowerTrench ® MOSFET
Electrical Characteristics T J = 25 °C unless otherwi noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV DSS Drain to Source Breakdown Voltage I D = 250 μA, V GS = 0 V
30 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient
I D = 250 μA, referenced to 25 °C
16
mV/°C I DSS Zero Gate Voltage Drain Current
V DS = 24 V, V GS = 0 V
我要改变1μA I GSS
Gate to Source Leakage Current, Forward V GS = 20 V, V DS = 0 V
100
nA
V GS(th)Gate to Source Threshold Voltage V GS = V DS , I D = 250 μA 1.0 2.0 3.0V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient
I D = 250 μA, referenced to 25 °C -6 mV/°C
r DS(on)Static Drain to Source On Resistance
V GS = 10 V, I D = 13.5 A
8.110m ΩV GS = 4.5 V, I D = 11.0 A 12.215V GS = 10 V, I D = 13.5 A T J = 125 °C
1114
g FS
Forward Transconductance
V DS = 5 V, I D = 13.5 A
53
S C iss Input Capacitance V DS = 15 V, V GS = 0 V,f = 1 MHz
12051605pF C oss Output Capacitance
370495pF C rss Rever Transfer Capacitance 3555pF R g
Gate Resistance
房子图片儿童画0.3
1.6
3.2
Ω
t d(on)Turn-On Delay Time V DD = 15 V, I D = 13.5 A,V GS = 10 V, R GEN = 6 Ω
帮凶
918ns t r Ri Time
310ns t d(off)Turn-Off Delay Time 2036ns t f Fall Time
告别母校作文
310ns Q g Total Gate Charge V GS = 0 V to 10 V
V DD = 15 V,
I D = 13.5 A 17
24nC Q g Total Gate Charge V GS = 0 V to 4.5 V 7.5
12
nC Q gs Gate to Source Charge 3.9nC Q gd
Gate to Drain “Miller” Charge
2.0
nC
V SD Source to Drain Diode Forward Voltage V GS = 0 V, I S = 2.1 A (Note 2)
0.75 1.1V V GS = 0 V, I S = 13.5 A (Note 2)0.86
幡然醒悟1.2t rr Rever Recovery Time I F = 13.5 A, di/dt = 100 A/μs 24
38ns Q rr Rever Recovery Charge 815nC t rr Rever Recovery Time I F = 13.5 A, di/dt = 300 A/μs
19
34ns Q rr
Rever Recovery Charge
13
24
nC
Notes :
1. R θJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while R θCA is determined by the ur's board design.
2. Pul Test: Pul Width < 300 μs, Duty cycle < 2.0%.
3. E AS of 29 mJ is bad on starting T J = 25 °C, L = 0.3 mH, I AS = 14 A, V DD = 27 V, V GS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pul occurrence only. No continuous rating is implied.
b) 125 °C/W when mounted
on a minimum pad of 2 oz copper.
50 °C/W when mounted on a 1 in 2 pad of 2 oz copper
a)
MOSFET
MOSFET
MOSFET
