FAIRCHILD FDMS9600S Manual
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FDMS9600S Dual N-Channel PowerTrench
®MOSFET
FDMS9600S Rev.D1
G1
脚汗多怎么办
D1
D1
D1
S1/D2
G2
S2
S2
S2
D1
申请小程序® MOSFET
FDMS9600S Rev.D
2
处女男天秤女r DS(on)
Drain to Source On Resistance GS D V GS = 10V, I D = 12A , T J = 125°C 8.613.0m Ω
V GS = 10V, I D = 16A V GS = 4.5V, I D = 14A
V GS = 10V, I D = 16A , T J = 125°C Q2 4.55.35.4 5.57.08.3
g FS
Forward Transconductance V DD = 10V, I D = 12A V DD = 10V, I D = 16A
Q1Q2
5468
S
Dynamic Characteristics
C iss Input Capacitance V DS = 15V, V GS = 0V, f= 1MHz
Q1Q2 1280230017053060pF C oss Output Capacitance
Q1Q2 52515457002055pF C rss Rever Transfer Capacitance Q1Q2
80250120375
pF R g
Gate Resistance
f = 1MHz
Q1Q2
1.01.7
手机拍照技巧Ω
Switching Characteristics
t d(on)Turn-On Delay Time V DD = 10V, I D = 1A, V GS = 10V, R GEN = 6Ω
Q1Q2 13172331ns t r Ri Time
Q1Q2 6111220ns t d(off)Turn-Off Delay Time Q1Q2 42546786ns t f Fall Time
Q1Q2 12322251ns Q g(TOT)Total Gate Charge健康管理中心
Q1
一缕晨光
V DD = 15V, V GS = 4.5V, I D = 12A Q2
V DD = 15V, V GS = 4.5V, I D = 16A Q1Q2 9211329
nC Q gs Gate to Source Gate Charge Q1Q2 38nC Q gd
Gate to Drain “Miller” Charge
Q1Q2
2.76.5
nC
®
rmit
MOSFET FDMS9600S Rev.
3
2:Pul Test: Pul Width < 300µs, Duty cycle < 2.0%.
FDMS9600S Rev.D14
