养黑鱼专利名称：CHEMICAL MECHANICAL POLISHING (CMP) HEAD, APPARATUS, AND METHOD AND
PLANARIZED SEMICONDUCTOR WAFER
sskPRODUCED THEREBY
制氢气发明人：KAJIWARA, JIRO,MOLONEY, GERARD,
S.,WANG, HUEY-MING,HANSEN, DAVID, A.
天女花
申请号：US0127151
寡廉鲜耻申请日：20010830
公开号：WO0218101A9
有机水稻
公开日：
20031030
专利内容由知识产权出版社提供
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摘要：Chemical Mechanical Polishing/Planarization (CMP) apparatus, method, and substrate produced thereby. Polishing surface with non-uniform recess therein. CMP head and method having integral slurry dispensing mechanism. CMP apparatus and method having rotating retaining ring. CMP apparatus and method having soft backed polishing head. CMP providing efficient u of slurry in polishing and planarizing process. Substrate (miconductor wafer) produced by CMP apparatus or method. In one embodiment, apparatus (100) includes subcarrier (160) with flexible member (185) attached to lower substrate holding surface (165). Flexible member (185) has hole(s) (195) therein so that pressurized fluid introduced between flexible member and subcarrier (160) directly press substrate (105) against polishing surface (125). Number and size of holes (195) are lected to provide sufficient friction between flexible member (185) and substrate (105) to cau rotation when drive mechanism rotates subcarrier (160). Subcarrier (160) having port adapted to draw vacuum on cavity (215)
论文的格式模板between lower surface (165) and flexible member (185). Flexible member and substrate (105) rve as valve (225) to isolate port from cavity when a predetermined vacuum has been achieved.
申请人：MULTI-PLANAR TECHNOLOGIES, INC.
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