专利名称：ALTERNATIVE METHODS FOR FABRICATION过年送礼品送什么给长辈
OF SUBSTRATES AND HETEROSTRUCTURES
成长路上的阳光MADE OF SILICON COMPOUNDS AND
ALLOYS
发明人：Mohamed-Ali Hasan
申请号：US12781551
申请日：20100517
公开号：US20100291769A1
公开日：
20101118
专利内容由知识产权出版社提供
三角函数周期公式专利附图：
dio台词
摘要：The prent invention relates to alternative methods for the production of
北京旅游攻略5日游crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the prent invention compris heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for epitaxial deposition of at least one atom or molecule, contacting the porous silicon deposition surface with a reactive gas mixture comprising at least one chemical species comprising a group IV element and at least one silicon chemical species, and depositing a silicon-group IV element layer on the porous silicon deposition surface. In another embodiment, the chemical species comprising a group IV element can be replaced with a transition metal species to form a silicon silicide layer.
花叶病申请人：Mohamed-Ali Hasan
地址：Concord NC US
国籍：US蚌埠龙湖公园
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