V DRM= 4500 V I TGQM= 4000 A I TSM= 32×103A V(T0)= 1.4 V r T= 0.325 mΩV DC-link= 2800 V Asymmetric Integrated Gate-Commutated Thyristor
5SHY 35L4510
Doc. No. 5SYA1232-02 June 07
•High snubberless turn-off rating
•Optimized for medium frequency (<1 kHz) and
wide temperature range
•High reliability
•High electromagnetic immunity
•Simple control interface with status feedback
•AC or DC supply voltage
•Contact factory for ries connection
Blocking
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit Rep. peak off-state voltage V DRM Gate Unit energized 4500 V
Permanent DC voltage for 100 FIT failure rate of GCT V DC-link Ambient cosmic radiation at a level
in open air. Gate Unit energized
2800 V
off-state 17 V
Rever voltage V RRM IGCT in
on-state 10 V Characteristic values
Parameter Symbol Conditions min typ max Unit Rep. peak off-state current I DRM V D = V DRM,Gate Unit energized 50 mA Mechanical data (e Fig. 11, 12)
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit Mounting force F m 36 40 44 kN Characteristic values
Parameter Symbol Conditions min typ max Unit Pole-piece diameter D p ± 0.1 mm 85 mm Housing thickness H25.3 25.8 mm Weight m 2.9 kg Surface creepage distance D s Anode to Gate 33 mm Air strike distance D a Anode to Gate 10 mm Length l± 1.0 mm 439 mm Height h± 1.0 mm 40 mm Width IGCT w± 1.0 mm 173 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
元器件交易网
ABB Switzerland Ltd, Semiconductors rerves the right to change specifications without notice.
GCT Data
On-state (e Fig. 3, 4, 5, 6, 14, 15) Maximum rated values 1)
Parameter
Symbol Conditions
min typ max Unit Max. average on-state current
I T(AV)M Half sine wave, T C = 85 °C,
Double side cooled 1700 A Max. RMS on-state current I T(RMS)
2670
A Max. peak non-repetitive surge on-state current I TSM
32×103
A Limiting load integral I 2t t p = 10 ms, Tj = 125 °C, sine wave after surge: V D = V R = 0 V
5.12×10
6
A 2s Max. peak non-repetitive surge on-state current I TSM
21×103 A Limiting load integral
I 2t
t p = 30 ms, Tj = 125 °C, sine wave after surge: V D = V R = 0 V
6.62×106
A 2s Stray inductance between GCT and antiparallel diode L D Only relevant for applications with antiparallel diode to the IGCT 300 nH Critical rate of ri of on-state current
di T /dt cr
For higher di T /dt and current lower than 100 A an external retrigger puls is required.
200
A/µs
Characteristic values
Parameter
Symbol Conditions min typ max Unit On-state voltage V T I T = 4000 A, T j = 125 °C 2.35 2.7 V Threshold voltage V (T0) 1.4 V Slope resistance
r T
T j = 125 °C
I T = 4000 A
0.325
卡通画
m Ω
Turn-on switching (e Fig. 14, 15) Maximum rated values 1)
Parameter
Symbol Conditions
min typ max Unit Critical rate of ri of on-state current
di T /dt cr f = 0..500 Hz, T j = 125 °C,
V D = 2800 V, I TM ≤ 4000 A
1000
A/µs
Characteristic values
Parameter
Symbol Conditions
min typ max Unit Turn-on delay time t don
3.5 µs Turn-on delay time status feedback t don SF
7 µs Ri time
t r 1 µs Turn-on energy per pul
E on
V D = 2800 V, T j = 125 °C I T = 4000 A, di/dt = V D / L i L i = 5 µH
C CL = 10 µF, L CL = 0.3 µH
1.5
J
Turn-off switching (e Fig. 7, 8, 10, 14, 15) Maximum rated values 1)
Parameter
Symbol Conditions
min typ max Unit Max. controllable turn-off current
I TGQM V DM ≤ V DRM , T j = 125°C,
V D = 2800 V, R S = 0.65 Ω, C CL = 10 µF, L CL ≤ 0.3 µH
4000
A
Characteristic values
Parameter
Symbol Conditions
提高孩子的智商min typ max Unit Turn-off delay time t doff 7 µs Turn-off delay time status feedback
t doff SF 7 µs Turn-off energy per pul E off
V D = 2800 V, T j = 125 °C V DM ≤ V DRM , R S = 0.65 Ω
I TGQ = 4000 A, L i = 5 µH C CL = 10 µF, L CL = 0.3 µH
19.5
22
J
Gate Unit Data
Power supply (e Fig. 2, 9, 10, 12, 13) Maximum rated values 1)
Parameter
Symbol Conditions
min typ max Unit Gate Unit voltage (Connector X1)
华为截屏快捷键
V GIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
28
40
V
运动常识Min. current needed to power up the Gate Unit I GIN Min Rectified average current e application note 5SYA 2031 2.1 A Gate Unit power consumption P GIN Max
100 W Characteristic values
Parameter
Symbol Conditions
min typ max Unit Internal current limitation
I GIN Max Rectified average current limited by
the Gate Unit
8
A
Optical control input/output 2)
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit Min. on-time t on 40 µs Min. off-time
t off
40 µs Characteristic values
国画作品Parameter
Symbol Conditions
min typ max Unit Optical input power P on CS -15 -1 dBm Optical noi power P off CS -45 dBm Optical output power P on SF -19 -1 dBm Optical noi power P off SF
CS: Command signal
SF: Status feedback
Valid for 1mm plastic optical fiber
(POF)
-50 dBm Pul width threshold t GLITCH Max. pul width without respon 400 ns External retrigger pul width
t retrig
600
1100
ns
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (e Fig. 11, 12, 13)
Parameter
Symbol Description
Gate Unit power connector X1 AMP: MTA-156, Part Number 641210-5 3)
LWL receiver for command signal CS Agilent, Type HFBR-2528 4)
LWL transmitter for status feedback
SF
Agilent, Type HFBR-1528 4)
2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP,
4) Agilent Technologies, www.
Visual feedback (e Fig. 13)
Parameter Symbol Description
Color Gate OFF LED1 "Light" when GCT is off
(green) Gate ON LED2 "Light" when gate-current is flowing (yellow) Fault
LED3 "Light" when not ready / Failure
(red) Power supply voltage OK
LED4 "Light" when power supply is within specified range
(green)
Thermal
Maximum rated values 1)
Parameter
Symbol
Conditions min typ max Unit Junction operating temperature T vj
-40 125 °C Storage temperature range T stg -40 60 °C Ambient operational temperature
T a
-40 50 °C Characteristic values
Parameter Symbol Conditions min typ max Unit Thermal resistance junction-to-ca of GCT
R th(j-c) Double side cooled
8.5 K/kW Thermal resistance ca-to-heatsink of GCT R th(c-h)
Double side cooledlol凯特
3
K/kW
Analytical function for transient thermal
impedance:
)
e -(1R = (t)Z n
1
i t/-i
c)-th(j i ∑=τ
i 1 2 3 4
R i (K/kW) 5.562 1.527 0.868 0.545
τi (s)
0.5119
0.0896
0.0091
0.0024
Fig. 1 Transient thermal impedance (junction-to-ca) vs. time (max. values)
Max. Turn-off current for Lifetime operation
• calculated lifetime of on-board capacitors 20 years
• with slightly forced air cooling (air velocity > 0.5 m/s)
•
strong air cooling allows for incread ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
Fig. 3GCT on-state voltage characteristics Fig. 4GCT on-state voltage characteristics
Fig. 5Surge on-state current vs. pul length, half-
sine wave
Fig. 6Surge on-state current vs. number of puls,
half-sine wave, 10 ms, 50Hz
Fig. 7 GCT turn-off energy per pul vs. turn-off口红印
current
舞剧李白Fig. 8 Safe Operating Area
Fig. 9 Max. Gate Unit input power in chopper mode
Fig. 10 Burst capability of Gate Unit
