专利名称：Deposition Technique for Producing High
Quality Compound Semiconductor Materials
发明人：Wang Nang Wang,Sergey Igorevich
Stepanov
申请号：US11571514去野营英语>百度传情
满意的英文申请日：20050627
公开号：US20080132040A1
公开日：
小儿秋季腹泻
20080605
专利内容由知识产权出版社提供
专利附图：
摘要：Deposited layers are advantageously obtained by utilizing a specific hydride vapour pha epitaxy deposition procedure. In this procedure, a vertical growth cell
structure with extended diffusion layer, a homogenising diaphragm, sidewall purging gas, anal independent gas and substrate heaters is ud for the deposition of III-V and VI compound miconductors. This gas flow is uniformly mixed through the extended diffusion layer and directed so that it contacts the full surface of the substrate to produce high quality and uniform films. Exemplary of such gas flow configurations are the positioning of a substrate at a distance from the gas outlets to allow the extended diffusion and a diaphragm placed in a short distance above the substrate to minimi the impact of the convection effect and to improve the uniformity. This symmetrical configuration allows easy scale up from a single wafer to multi-wafer system. This vertical configuration allows the quick switching between different reactive gas precursors so that time modulated growth and etch process can be employed to further minimi the defects density of the deposited materials.
申请人：Wang Nang Wang,Sergey Igorevich Stepanov
地址：Bath GB,St. Petersburg RU星星之火的意思
莫斯科英语怎么读国籍：GB,RU
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