专利名称：Dislocation stress memorization technique
(DSMT) on epitaxial channel devices
发明人：Tsung-Hsing Yu,Shih-Syuan Huang,Yi-Ming
Sheu,Ken-Ichi Goto
申请号：US15345814
申请日：20161108
公开号：US09899517B2
公开日：
20180220
专利内容由知识产权出版社提供
专利附图：
入党感言摘要：The prent disclosure relates to a transistor device having epitaxial source and drain regions with dislocation stress memorization (DSM) regions that provide stress to a神奇的大自然作文>国产口红>炖羊排骨的家常做法
channel region. In some embodiments, the transistor device has an epitaxial source region arranged within a substrate. An epitaxial drain region is arranged within the substrate and is parated from the epitaxial source region by a channel region. A first DSM region, which has a stresd lattice configured to generate stress within the channel region, extends from below the epitaxial source region to a location within the epitaxial source region. A cond DSM region, which has a stresd lattice configured to generate stress within the channel region, extends from below the epitaxial drain region to a location within the epitaxial drain region.
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市场分析怎么做申请人：Taiwan Semiconductor Manufacturing Co., Ltd.
地址：Hsin-Chu TW
国籍：TW健康是1后面是0的名言
代理机构：Eschweiler & Potashnik, LLC
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