书法欣赏专利名称：Multi-level (4 state/2-bit) stacked gate flash优文
memory cell
发明人：Chrong Jung Lin,Shui-Hung Chen,Hsin-Ming
Chen
青岛农业大学分数线
申请号：US10295157
申请日：20021115
公开号：US06734055B1
公开日：
香辣牛肉粒20040511
回访母校专利内容由知识产权出版社提供
专利附图：
师培通
摘要：A method is provided for forming a highly den stacked gate flash memory cell with a structure having multi floating gates that can assume 4 states and, therefore,
store 2 bits at the same time. This is accomplished by providing a miconductor substrate having gate oxide formed thereon, and shallow trench isolation and a p-well formed therein. A layer of nitride is next formed over the substrate and an opening formed therein. Polysilicon floating gate spacers are formed in the opening. A dielectric layer is then formed over the floating gates followed by the forming of a control gate. The adjacent nitride layer is then removed leaving a multi-level structure comprising a control gate therebetween multi floating gates with the intervening dielectric layer.
申请人：TAIWAN SEMICONDUCTOR MANUFACTORING COMPANY到达公司>复和
代理人：George O. Saile,Stephen B. Ackerman,Douglas R. Schnabel
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