专利名称：CVD Ta2O5/oxynitride stacked gate
insulator with TiN gate electrode for sub-垃圾处理方式>prove
quarter micron MOSFET
发明人：Shi-Chung Sun
申请号：US09292354
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申请日：19990415
公开号：US06171900B1
公开日：
娃娃菜的做法
20010109
专利内容由知识产权出版社提供
专利附图：
摘要：A method of fabricating a CVD TaO/Oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFETs is disclod. In a first embodiment, the
surface of a silicon substrate is reacted in NO or NO ambient to form an oxynitride layer. Tantalum oxide is next chemical vapor deposited, thus forming a TaO/Oxynitride stacked gate insulator. The stacked gate is then completed by depositing titanium nitride as the gate electrode and then patterning and forming the gate structure. In the cond embodiment, a gate oxide is first formed on the silicon substrate. Then the gate oxide layer is nitridated in NO or NO ambient to form the oxynitridated layer, thus forming a two-step oxynitride layer. The tantalum oxide layer and the titanium nitride gate electrode are formed as in the first embodiment. It is disclod in the prent invention that by replacing the conventional SiOlayer with a composite layer of TaO/oxynitride, where the oxynitride dielectric layer is grown in a nitrogen ambient, charge trapping, interface state generation, and breakdown field distribution, the time-dependent dielectric breakdown (TDDB) of gate oxides and hence the reliability of MOSFET devices are improved substantially.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
一字之师的意思
代理人：George O. Saile,Stephen B. Ackerman
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