专利名称：ACTIVE LAYER STACKED ELEMENT 发明人：KOYAMA KENICHI
生病用英语怎么说申请号：JP9810690
富豪发家史申请日：19900413
公开号：JPH03296256A
微官网公开日：名人名句摘抄
东山塔
sumifs函数的使用方法19911226
专利内容由知识产权出版社提供
中学生网摘要：PURPOSE:To lower the value of contact resistance and reduce dispersion by shortening each electrode to the transistor having the structure of two active layers, and, for the lower layer transistor, removing the interface between a columnar electrode and a pedestal electrode. CONSTITUTION:After formation of lower layer transistors 5, 6, and 7, a silicon oxide film 3 to become a first insulating film is formed. Subquently, upper layer transistors 5a, 6a, and 7a are formed, and the whole face is covered with a cond silicon oxide film 4 to become a cond insulating film. Next, by the exposure process using a photoresist and the dry etching process, to the upper layer transistor, a cond contact hole, in the silicon oxide film 4, and to the lower transistor, a first contact hole, in the silicon oxide film 3, are formed, and then only in the first contact hole, a columnar electrode 8a by tungsten is formed. Lastly, aluminum is deposited, and wirings 10 are formed the columnar electrode 8a and in the cond contact hole of the upper layer transistor.
申请人：NEC CORP
更多信息请下载全文后查看
>珍惜你拥有的
