Optimum Technology Matching ® Applied
GaAs HBT
InGaP HBT
GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT
GaAs pHEMT Si CMOS Si BJT
GaN HEMT Functional Block Diagram
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Product Description
Ordering Information
BiFET HBT
GaAs HBT 150MHz TO 960MHz POWER
AMPLIFIER
The RFPA3800 is a single-stage GaAs HBT power amplifier specifically designed for high power, high efficiency applications. It is also well-suited for Wireless Infrastruc-
ture linear power amplifier applications. The RFPA3800 can be optimized for linear or saturated operation by varying the quiescent bias point and load line. It also offers low noi figure making it an excellent solution for 2nd and 3rd stage LNAs.The RFPA3800 exhibits excellent thermal performance through the u of a ther-mally-enhanced plastic surface-mount slug package.
Features
⏹5W Output Power (P1dB)⏹High Linearity: OIP3>48dBm ⏹High Efficiency
⏹
Low Noi: NF=3.2dB at 945MHz
⏹5V to 7V Operation ⏹
Thermally Enhanced Slug Package
火猫出装
Applications
⏹
GaAs Driver for Ba Station Amplifiers
⏹
PA Stage for Commercial Wireless Infrastructure ⏹
Final Stage PA in Femtocell and Repeater Applications
⏹
Final Stage PA in High Efficiency, High Power Applications ⏹
Class AB Operation for LTE and GSM Transceiver Applications
✓Package: SOIC-8
RFPA3800SQ Sample bag with 25 pieces RFPA3800SR 7” Reel with 100 pieces RFPA3800TR77” Reel with 750 pieces RFPA3800TR1313” Reel with 2500 pieces
RFPA3800PCK-410450MHz to 470MHz PCBA with 5-piece Sample Bag RFPA3800PCK-411附注
920MHz to 960MHz PCBA with 5-piece Sample Bag
Absolute Maximum Ratings
Supply Voltage (V CC and V BIAS ) >300MHz 7.5V Supply Voltage (V CC and V BIAS ) <300MHz 5.5V Reference Current (I REF )10mA DC Supply Current (I C )
2300mA CW Input Power, 2:1 Output VSWR 28dBm CW Input Power, 5:1 Output VSWR 20dBm Output Load VSWR at P3db 5:1Operating Junction Temperature 160°C Operating Temperature Range (T L )-40 to +85°C Storage Temperature
-55 to +150°C
ESD Rating: Human Body Model Class 1B Moisture Sensitvity Level
MSL 2
Unit
460MHz
V CC =7.0V, V BIAS
=7.0V, I CQ =650mA Frequency
450
460470MHz EVB tuned for linear operation Input Power (P IN )23
dBm V CC <7.5V, load VSWR<2:1Gain (S21)18dB OIP348dBm 20dBm/tone, tone spacing=1MHz P1dB
36.7dBm EVB tuned for linear operation Efficiency at P3dB 50%At P3dB, EVB tuned for linear operation
Input Return Loss (S11)15dB Output Return Loss (S22)9dB Noi Figure
5dB WCDMA Ch Power at -65dBc ACPR 19.5dBm 3GPP 3.5, Test Model 1, 64 DPCH WCDMA Ch Power at -55dBc ACPR
24.5
dBm
3GPP 3.5, Test Model 1, 64 DPCH 945MHz
V CC =7.0V, V BIAS =7.0V, I CQ =650mA Frequency 920
940
960MHz EVB tuned for linear operation Input Power (P IN )26
dBm V CC <7.5V, load VSWR<2:1Gain (S21)15dB 945MHz
OIP349dBm 20dBm/tone, tone spacing=1MHz P1dB
36dBm EVB tuned for linear operation Efficiency at P3dB 45%At P3dB, EVB tuned for linear operation
Input Return Loss (S11)12dB Output Return Loss (S22)11dB Noi Figure
3.2dB WCDMA Ch Power at -65dBc ACPR 19.3dBm 3GPP 3.5, Test Model 1, 64 DPCH WCDMA Ch Power at -55dBc ACPR
23.7
dBm 3GPP 3.5, Test Model 1, 64 DPCH Power Supply
Operating Current (Quiescent)500
650700mA At V CC =7.0V
Operating Voltage (V CC )7.07.5
V Max recommended collector voltage Thermal Resistance (R TH )11.5
梦见荷花
C/W At quiescent current, no RF Power Down Current
20 A
At V REF =0V.
Caution! ESD nsitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cau permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor-mance or functional operation of the device under Absolute Maximum Rating condi-tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its u, nor for any infringement of patents, or other rights of third parties, resulting from its u. No licen is granted by implication or otherwi under any patent or patent rights of RFMD. RFMD rerves the right to change component circuitry, recommended appli-cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 10
高罗00ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.
Typical Performance (450MHz to 470MHz Application Circuit)
安徽自驾游攻略
Typical Performance (450MHz to 470MHz Application Circuit)
Evaluation Board Schematic
(450MHz to 470MHz Application Circuit)
ΩΩ
Ω
ΩΩ
Ω
Evaluation Board Bill of Materials (BOM)
450MHz to 470MHz Application Circuit
Description Reference Designator Manufacturer Manufacturer’s P/N PCB DDI RFPA3800410(A) RFPA3800U1RFMD RFPA3800 RES, 1K, 1%, 1/16W, 0603R1Panasonic Industrial Co ERJ-3EKF1001V CAP, 10uF, 20%, 10V, TANT-A C13, C20Kemet T491A106M010AT CAP, 22pF, 5%, 50V, C0G, 0402C1GRM1555C1H220JZ01E CAP, 12pF, 2%, 50V, HI-Q, 0402C5, C9Johanson Technology500R07S120GV4TD CAP, 82pF, 5%, 50V, C0G, 0402C3Murata Electronics
日常用语英语GRM1555C1H820JZ01D烙饼卷带鱼
North America
GRM155R71H221KA01E CAP, 220pF, 10%, 50V, X7R, 0402C10-C11, C22Murata Electronics
知行统一原则North America, I
CAP, 1000pF, 10%, 50V, X7R, 0402C12, C21Murata Electronics GRM155R71H102KA01E IND, 4.3nH, +/-0.1nH, T/F, 0402L1Murata Electronics LQP15MN4N3B02D IND, 2.4nH, +/-0.1nH, T/F, 0402L5Murata Electronics LQP15MN2N4B02D IND, 2.2nH, +/-0.1nH, T/F, 0402L2Murata Electronics LQP15MN2N2B02D RES, 0 , 0402L3, L6-L7Kamaya, Inc RMC1/16SJPTH IND, 47nH, 5%, W/W, 0603L4Coilcraft0603HC-47NXJLW CONN, BANANA JACK, RED P1-P2JOHNSON CO108-0902-001 CONN, BANANA JACK, BLACK P3JOHNSON CO108-0903-001 CONN, SMA, ST JACK REC, FLNG MT, T/H J1-J2JOHNSON CO142-0701-631 HEATSINK, POWER CELL MP12020048-2
2-56 SS socket head screws, 3/16 long S1-S10McMaster-Carr92196A076
DNP C2, C4, C6-C8, C14, C16-C19, C23-C27
DNP R2-R5
DNP L8
