TOP SIDE COOLING FOR GAN POWER DEVICE

更新时间:2023-06-12 19:52:29 阅读: 评论:0

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dragon怎么读专利名称:TOP SIDE COOLING FOR GAN POWER DEVICE
黑豆的好处发明人:OTREMBA, Ralf,SCHIESS, Klaus
申请号:EP17187833.3
英语四六申请日:20170824
一听就耳熟的英文歌公开号:EP3297022B1
学生成绩分析系统
公开日:
20210818
专利内容由知识产权出版社提供
iphone音乐摘要:A packaged miconductor includes an electrically insulating encapsulant having opposite facing first and cond planar sides. A thermally conductive substrate is partially embedded in the encapsulant such that an outer side of the substrate is expod at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant. A GaN bad power miconductor device is completely embedded in the encapsulant and includes: a main side having electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side the substrate. A plurality of electrically conductive leads is partially embedded in the substrate and electrically connected to the device terminals. Vertical portions of the leads extend away from the substrate towards the cond side of the encapsulant.
代理机构:Moore, Derek
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