Parameter
Max.
Units
V DS
Drain- Source Voltage
-30V I D @ T A = 25°C Continuous Drain Current, V GS @ -10V -3.0I D @ T A = 70°C Continuous Drain Current, V GS @ -10V -2.4A
I DM
Puld Drain Current -24P D @T A = 25°C Power Dissipation 1.25P D @T A = 70°C Power Dissipation 0.80Linear Derating Factor 10mW/°C V GS
Gate-to-Source Voltage
± 20V T J, T STG
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Junction and Storage Temperature Range
-55 to + 150
°C
04/30/03
Parameter
Max.
Units
R θJA
Maximum Junction-to-Ambient
100
°C/W
Thermal Resistance
Absolute Maximum Ratings
W 1
produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM ,is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.画人像
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount
l Available in Tape & Reel
IRLML5203
PROVISIONAL
Source-Drain Ratings and Characteristics
Repetitive rating; pul width limited by
max. junction temperature.
Notes:
Pul width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5c.
Parameter
开通微信Min.Typ.Max.Units Conditions V (BR)DSS
Drain-to-Source Breakdown Voltage -30––––––V V GS = 0V, I D = -250µA
∆V (BR)DSS /∆T J
Breakdown Voltage Temp. Coefficient –––0.019–––V/°C Reference to 25°C, I D = -1mA –––––– 98V GS = -10V, I D = -3.0A
–––––– 165V GS = -4.5V, I D = -2.6A V GS(th)
Gate Threshold Voltage -1.0–––-2.5V V DS = V GS , I D = -250µA g fs Forward Transconductance 3.1––––––S V DS = -10V, I D = -3.0A ––––––-1.0V DS = -24V, V GS = 0V
––––––-5.0V DS = -24V, V GS = 0V, T J = 70°C Gate-to-Source Forward Leakage ––––––-100V GS = -20V
Gate-to-Source Rever Leakage ––––––100V GS = 20V Q g Total Gate Charge
–––9.514I D = -3.0A Q gs Gate-to-Source Charge
––– 2.3 3.5nC V DS = -24V Q gd Gate-to-Drain ("Miller") Charge ––– 1.6 2.4V GS = -10V t d(on)Turn-On Delay Time –––12–––V DD = -15V t r Ri Time
–––18–––I D = -1.0A
t d(off)Turn-Off Delay Time –––88–––R G = 6.0Ωt f Fall Time
–––52–––V GS = -10V C iss Input Capacitance –––510–––V GS = 0V C oss Output Capacitance
–––71–––pF V DS = -25V C rss
Rever Transfer Capacitance为什么耳朵会嗡嗡响
高风险投资–––
43
–––ƒ = 1.0MHz
Electrical Characteristics @ T J = 25°C (unless otherwi specified)
I GSS µA
m Ω桑葚干的功效
R DS(on)Static Drain-to-Source On-Resistance I DSS Drain-to-Source Leakage Current nA
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IRLML5203
3
PROVISIONAL
Vs. Temperature
IRLML5203
PROVISIONAL
Fig 8. Maximum Safe Operating Area
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Forward Voltage
IRLML5203
5
PROVISIONAL
辩论会作文
Ca Temperature
V DD
V V t t t t Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
