专利名称：DENSITY MULTIPLICATION AND IMPROVED LITHOGRAPHY BY DIRECTED BLOCK怎么赚到钱
斐讯k3COPOLYMER ASSEMBLY
发明人：Paul Franklin NEALEY,Huiman Kang,Francois Detcheverry,Juan J. De Pablo,Ricardo
母亲的情人3Ruiz,Thomas Albrecht舒适的英语
申请号：US12329484
申请日：20081205
公开号：US20090196488A1祛痘产品
公开日：
闲情逸致的意思
绕的成语
20090806
专利内容由知识产权出版社提供
专利附图：
摘要：Methods to pattern substrates with den periodic nanostructures that combine top-down lithographic tools and lf-asmbling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to lf-asmble in the prence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also incread. High density and quality nanoimprint templates and other nanopatterned structures are also provided.晨跑几点最佳时间
申请人：Paul Franklin NEALEY,Huiman Kang,Francois Detcheverry,Juan J. De
Pablo,Ricardo Ruiz,Thomas Albrecht
地址：Madison WI US,Madison WI US,Madison WI US,Madison WI US,San Bruno CA US,San Jo CA US
国籍：US,US,US,US,US,US
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