February 2012
FDMC3612 N-Channel PowerTrench ® MOSFET
FDMC3612
N-Channel Power Trench ® MOSFET
100 V, 12 A, 110 m Ω
Features
Max r DS(on) = 110 m Ω at V GS = 10 V, I D = 3.3 A Max r DS(on) = 122 m Ω at V GS = 6 V, I D = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench ® p
rocess that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
DC - DC Conversion PSE Switch
G S
S S D D D D
5678
321
412345
D D
D
D
G S
S S Bottom
Top
MLP 3.3x3.3
6
7
8
MOSFET Maximum Ratings T C = 25 °C unless otherwi noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter
Ratings Units V DS Drain to Source Voltage
差之毫厘失之千里100V V GS Gate to Source Voltage ±20V
I D Drain Current -Continuous (Package limited) T C = 25 °C 16A -Continuous (Silicon limited) T C = 25 °C
12 -Continuous T A = 25 °C (Note 1a) 3.3 -Puld
15E AS Single Pul Avalanche Energy (Note 3)32mJ P D Power Dissipation T C = 25 °C
35W Power Dissipation T A = 25 °C (Note 1a) 2.3T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C R θJC Thermal Resistance, Junction to Ca
3.5°C/W
材料专业就业前景R θJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
Device Marking Device Package Reel Size Tape Width Quantity FDMC3612
FDMC3612
Power 33
13’’
12 mm
3000 units
® MOSFET
Dynamic Characteristics
Switching Characteristics
腾起
Drain-Source Diode Characteristics
V GS = 10 V, I D = 3.3 A, T J = 125 °C 177212
g FS
Forward Transconductance
V DS = 10 V, I D = 3.3 A凯旋的意思
13
S C iss Input Capacitance V DS = 50 V, V GS = 0 V,f = 1 MHz
662880pF C oss Output Capacitance
4055pF C rss Rever Transfer Capacitance
2335
pF R g
Gate Resistance
1.3
Ω
t d(on)Turn-On Delay Time V DD = 50 V, I D = 3.3 A,V GS = 10 V, R GEN = 6 Ω
7.415ns t r Ri Time
2.810ns t d(off)Turn-Off Delay Time 1934ns t f Fall Time
210ns Q g(TOT)Total Gate Charge V GS = 0 V to 10 V V DD = 50 V, I D = 3.3 A
14.4
21nC Q g(TOT)Total Gate Charge V GS = 0 V to 5 V
7.912
nC Q gs Total Gate Charge
2.3
nC Q gd
Gate to Drain “Miller” Charge
纸盒制作3.7
nC
V SD Source to Drain Diode Forward Voltage V GS = 0 V, I S = 3.3 A (Note 2)
0.88 1.2V V GS = 0 V, I S = 2 A (Note 2)0.77lan是什么
1.2t rr Rever Recovery Time I F = 3.3 A, di/dt = 100 A/μs
34
55ns Q rr
Rever Recovery Charge
37
60
nC
NOTES:
1. R θJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while R θCA is determined by the ur's board design.
2. Pul Test: Pul Width < 300 μs, Duty cycle < 2.0%.
毛尖怎么泡3. Starting T J = 25 °C; N-ch: L = 1 mH, I AS = 8 A, V DD = 90 V, V GS = 10 V.
a) 53 °C/W when mounted on a 1 in 2 pad of 2 oz copper
b) 125 °C/W when mounted on a minimum pad of 2 oz copper
MOSFET
MOSFET羊肚的功效与作用
MOSFET
