METHOD AND APPARATUS FOR MANUFACTURING SILICON HAV

更新时间:2023-06-07 18:17:53 阅读: 评论:0

专利名称:METHOD AND APPARATUS FOR
MANUFACTURING SILICON HAVING HIGH
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PURITY
汽车冷知识发明人:ROBAATO KEI GORUDO,CHAARUZU AARU DEITSUKUSON情人节活动主题
申请号:JP16782781
申请日:19811020
公开号:JPH0131451B2
公开日:
19890626
励志句子图片专利内容由知识产权出版社提供
离骚课文摘要: METHOD AND APPARATUS FOR PRODUCING HIGH PURITY SILICON FROM FLAMES OF SODIUM AND SILICON TETRACHLORIDE ABSTRACT OF THE DISCLOSURE Vaporized silicon tetrachloride is mixed with vaporized sodium in an exothermic reaction producing liquid silicon droplets and gaous sodium chloride which are subquently parated in an efficient manner. Separation of the silicon from the salt by-products is performed by a jet impaction paration technique wherein the products of the complete reaction between sodium and silicon tetrachloride are made to exit from a small hole in the reactor into a region held at a pressure less than half of the reactor pressure. A supersonic jet is thus formed which impinges upon a surface so that the direction of flow of the gas changes abruptly. The silicon droplets, however, are carried by their large forward momentum onto the surface where they are deposited. The salt vapor is then made to flow away from the depositing area and is pasd over cooled surfaces where it is made to conden. Modi- fications of the basic technique allow the silicon to be collected in a variety of physical configurations including pellet form, crystal form, sheet
form and ingot form.ipad密码忘了怎么办
股票线创业者协会申请人:EAROKEMU RISAACHI LAB INC 更多信息请下载全文后查看

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