专利名称：Well diffusion
做好吃发明人：Hattangady, Sunil V.,Kaya, Cetin
(NMI),Mercer, Douglas E.,Plumton, Donald L.申请号：EP98310136.1
申请日：19981210
公开号：EP0924751A2喝牛奶上火吗>专业用英语怎么说
公开日：
19990623碧绿组词
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专利内容由知识产权出版社提供
摘要：A method of fabricating a miconductor MOS device wherein a preferably doped miconductor substrate, preferably silicon, is provided having a pad oxide, preferably silicon dioxide, on a surface thereof. A dopant of opposite conductivity type is dispod into the substrate, preferably by implantation through the pad oxide. The substrate is annealed at a temperature of from about 1150 to about 1200 degrees C in an ambient having from about 99.0 to about 99.9 percent by volume of a gas which is inert to the substrate during the annealing step and which is preferably nitrogen or argon and from about 1.0 to about 0.1 percent by volume oxygen and preferably about 0.25 percent by volume oxygen, to form the deep well in the substrate.
申请人：TEXAS INSTRUMENTS INC.
地址：13500 North Central Expressway Dallas, Texas 75243 US
祝福句子唯美短句国籍：US
代理机构：Potter, Julian Mark
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