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70
IEEE Std C62.35™- 2010
(Revision of
IEEE Std C62.35-1987)
吉他独奏曲谱IEEE Standard Test Methods
for Avalanche Junction Semiconductor Surge-Protective Device Components
Sponsor
梦见朋友去世>刚开始Surge Protective Devices Committee软件工程论文
of the
IEEE Power & Energy Society
Approved 25 March 2010
IEEE-SA Standards Board
The Institute of Electrical and Electronics Engineers, Inc.3 Park Avenue, New York, NY 10016-5997, USA
Copyright © 2010 by the Institute of Electrical and Electronics Engineers, Inc.All rights rerved. Published 31 August 2010. Printed in the United States of America.
IEEE is a registered trademark in the U.S. Patent & Trademark Office, owned by the Institute of Electrical and Electronics Engineers, Incorporated.
橄榄汁Print: ISBN 978-0-7381-6257-7 STD96064PDF: ISBN 978-0-7381-6258-4 STDPD96064
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Abstract : Avalanche breakdown diodes ud for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discusd in this standard. The avalanche breakdown diode surge suppressor is a miconductor diode which can operate in either the forward or rever direction of its V-I characteristic. This component is a single package, which may be asmbled from any combination of ries and/or parallel diode chips.
This standard contains definitions, rvice conditions, and a ries of test criteria for determining the electrical characteristics and verifying ratings of the avalanche breakdown diodes. If the characteristics differ with the direction of conduction, then each direction of conduction shall be parately specified.
Keywords: avalanche breakdown diode, avalanche junction miconductor, breakdown voltage,clamping communication circuits, impul, limiting, power circuits, silicon avalanche diode (S
AD),surge, surge-protective device (SPD), surge protector, stand-by current, transient voltage suppressor (TVS), zener
Introduction
This introduction is not part of IEEE Std C62.35-2010, IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Component s.
This test specification has been developed for the purpo of testing and evaluating avalanche junction miconductor type surge protective device components. The components are ud as a surge diverter for limiting transient overvoltages in power and communications circuits. The components are similar to a standard Zener or avalanche regulator diode except that they are designed for short time-frame occurrences than continuous regulation.
The interest in low-voltage avalanche junction miconductor surge protective devices has grown with the trend to highly sophisticated electrical and electronic devices which are expod to surges from the environment. Initially, there were a few standard terms or tests to define or compare the devices. The IEEE Surge Protection Devices Committee formed its Low-Voltage Surge-Protection Devices Working Group in 1970 to define the parameters.
Experts were drawn from many fields in communications and power utilities, electronic manufacturers and urs, test equipment manufacturers and laboratories, and producers of avalanche junction miconductor surge protective devices. The requirements, experiences, and vocabularies of the reprentatives were melded to produce the IEEE Std C62.35 document as a guide to potential urs of the devices. The first document was published in 1987 and reaffirmed in 1993. This edition updates the test circuits, removes little ud definitions, adds an inrtion loss test and harmonis with IEC terminology.
Notice to urs
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