专利名称：Structure and method of Tinv scaling for
high k metal gate technology引人注目意思
发明人：Michael P. Chudzik,Dechao Guo,Siddarth A.
Krishnan,Unoh Kwon,Carl J. Radens,Shahab
Siddiqui
申请号：US14167532
申请日：20140129
双鱼女
公开号：US09087784B2
果汁果冻公开日：
20150721
专利内容由知识产权出版社提供
女生四字网名专利附图：
遗愿清单影评
摘要：A complementary metal oxide miconductor (CMOS) structure including a
scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) is provided. Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. The pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack may also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % Nand an nFET threshold voltage adjusted species located therein.
申请人：International Business Machines Corporation
地址：Armonk NY US
泡沫歌曲国籍：US黑眼圈是怎么引起的
代理机构：Scully, Scott, Murphy & Presr, P.C.
代理人：Joph P. Abate, Esq.
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