专利名称：MULTI-GATE LATERAL OVERFLOW
INTEGRATION CAPACITOR SENSOR
发明人：Woon Il Choi,Keiji Mabuchi
申请号：US16717768
申请日：20191217重走红军路
公开号：US20210183926A1
公开日：
20210617二级简码
理想体重专利内容由知识产权出版社提供
和从前不一样专利附图：
婚礼花童摘要：A pixel circuit includes a photodiode, a floating diffusion, and a conduction gate channel of a multi-gate transfer block dispod in a miconductor material layer. The multi-gate transfer block is coupled to the photodiode, the floating diffusion, and an
overflow capacitor. The multi-gate transfer block also includes first, cond, and third gates that are dispod proximate to the single conduction gate channel region. The conduction gate channel is a single region shared among the first, cond, and third gates. Overflow image charge generated in the photodiode leaks from the photodiode into the conduction gate channel to the overflow capacitor in respon to the first gate, which is coupled between the photodiode and the conduction gate channel, receiving a first gate OFF signal and the cond gate, which is coupled between the conduction gate channel and the overflow capacitor, receiving a cond gate ON signal.
申请人：OMNIVISION TECHNOLOGIES, INC.
钢笔简笔画海鳗鱼的做法地址：Santa Clara CA US
国籍：US
5米等于多少毫米
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