Lecture 7:
山西四建集团有限公司
IGBT Ι
Oh, Kwang-Hoon, Ph. D.
池畔
Contents •Introduction •IGBT vs MOSFET
神州6号•IGBT Structure •IGBT Characteristics -Forward Blocking -Forward Conduction -IGBT Operation
-Latch-Up
-Latch-Up suppression
-Switching Characteristics
•Lifetime Control
•High Temperature Characteristics
•Short Circuit Ruggedness
三个女人的艳遇•SOA
•NPT IGBTs?
•IGBT Design/ Process
目录
简介
ＩＧＢＴ结构
ＩＧＢＴ特性
正向阻断
正向导通
What is IGBT?
•IGBT: I nsulated G ate B ipolar T ransistor (BJT + MOSFET)
Equivalent circuit symbol
IGBT
韩文网名女生Low <12kHz Medium <40kHz High<150kHz
电脑如何分区>皮肤变白方法Difference IGBT vs. MOSFET:
•smaller chip size -> lower price
•softer switching, lower EMI
羊肉营养•temperature stable –
no significant loss increa
@ increasing Ta / Tj
•not suitable for ultra
high frequencies
