高频整流二极管参数

更新时间:2023-05-31 04:52:31 阅读: 评论:0

迟暮花开V RSM V RRM
Type
V  V 1200
1200
DSEI 2x 101-12A
Symbol Test Conditions Maximum Ratings (per diode)
I F(RMS)T VJ  = T VJM
130A I F(AV)M x T C
雄蕊由什么组成
= 50°C; rectangular, d = 0.5
91
A I FRM t P  < 10 m s; rep. rating, pul width limited by T VJM TBD A I FSM
T VJ  = 45°C;
t = 10 ms (50 Hz), sine 900A t = 8.3 ms (60 Hz), sine
970A T VJ  = 150°C;t = 10 ms (50 Hz), sine
810A t = 8.3 ms (60 Hz), sine
360图片大全
870A I 2t
T VJ  = 45°C
t = 10 ms (50 Hz), sine 4100A 2s t = 8.3 ms (60 Hz), sine
4000A 2s T VJ  = 150°C;t = 10 ms (50 Hz), sine
3300A 2s t = 8.3 ms (60 Hz), sine 3200A 2s T VJ
-40...+150
°C T VJM 150°C T stg -40...+150
°C P tot T C  = 25°C 250W V ISOL 50/60 Hz, RMS 2500V~I ISOL  £ 1 mA
诺贝尔奖将揭晓M d Mounting torque
1.5/13Nm/lb.in.Terminal connection torque (M4)
1.5/13
Nm/lb.in.
Weight 30
g
Symbol Test Conditions Characteristic Values (per diode)
typ.max.
I R
T VJ  = 25°C V R = V RRM
3
mA T VJ  = 25°C V R = 0.8 • V RRM    1.5mA T VJ  = 125°C V R = 0.8 • V RRM 15mA V F I F  = 100 A;
T VJ =150°C    1.61V T VJ =25°C
1.87V V T0For power-loss calculations only
1.01V r T    6.1m W R thJC 0.5
K/W R thCH 0.05
K/W t rr I F  = 1 A; -di/dt = 400 A/µs; V R  = 30 V; T VJ  = 25°C  4060ns I RM
V R  = 100 V;I F  = 75 A; -di F /dt = 200 A/µs  24
30
A
L £ 0.05 mH; T VJ  = 100°C
DSEI 2x 101左肩有痣
V RRM =1200 V I FAVM =2x 91 A t rr =40 ns
x  I FAVM  rating includes rever blocking loss at T VJM , V R  = 0.8 V RRM , duty cycle d = 0.5Data according to IEC 60747
IXYS rerves the right to change limits, test conditions and dimensions
展开全文
Features
q International standard package q miniBLOC (ISOTOP compatible)q Isolation voltage 2500 V~
q matched diodes f. parallel operation q Planar passivated chips q two independent diodes q Very short recovery time
q Extremely low switching loss q Low I RM -values
q
Soft recovery behaviour
Fast Recovery
理发器哪个品牌好
Epitaxial Diode (FRED)
文爱文章miniBLOC, SOT-227 B
E72873
008
Fig. 7Transient thermal impedance junction to ca at various duty cycles

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