Table I
Part Number Nominal Output Voltage (V)REF191 2.048REF192 2.50REF193 3.00REF194 4.50REF195 5.00REF196 3.30REF198
4.096
ORDERING GUIDE
ppt打开软件
Temperature Package Package Model Range Description Option 1REF19xGP –40°C to +85°C 8-Lead Plastic DIP 2N-8REF19xES 3–40°C to +85°C 8-Lead SOIC SO-8REF19xFS 3–40°C to +85°C 8-Lead
SOIC SO-8REF19xGS –40°C to +85°C 8-Lead SOIC SO-8REF19xGRU –40°C to +85°C 8-Lead TSSOP RU-8
REF19xGBC
+25°C
DICE
NOTES 1
N = Plastic DIP, SO = Small Outline, RU = Thin Shrink Small Outline.2
8-Lead plastic DIP only available in “G” grade.3
REF193 and REF196 are available in “G” grade only.
PIN CONFIGURATIONS a
Precision Micropower, Low Dropout,
Voltage References REF19x Series
8-Lead Narrow-Body SO and TSSOP
(S Suffix and RU Suffix)
TP V S SLEEP GND
NC
NC OUTPUT TP
REV.D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its u, nor for any infringements of patents or other rights of third parties which may result from its u. No licen is granted by implication or otherwi under any patent or patent rights of Analog Devices.
8-Lead Epoxy DIP (P Suffix)
TP V S SLEEP
GND
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS NO USER CONNECTION
NC NC OUTPUT TP
FEATURES
Initial Accuracy: ؎2 mV max
Temperature Coefficient: 5 ppm/°C max Low Supply Current: 45 A max Sleep Mode: 15 A max Low Dropout Voltage
Load Regulation: 4 ppm/mA Line Regulation: 4 ppm/V High Output Current: 30 mA Short Circuit Protection
APPLICATIONS
Portable Instrumentation
蛋糕英语
A-to-D and D-to-A Converters Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations GENERAL DESCRIPTION
REF19x ries precision bandgap voltage references u a pat-ented temperature drift curvature correction circuit and lar trimming of highly stable thin film resistors to achieve a very low temperature coefficient and a high initial accuracy.
The REF19x ries are micropower, Low Dropout Voltage (LDV) devices providing a stable output voltage from supplies as low as 100 mV above the output voltage and consuming less than 45 µA of supply current. In sleep mode, which is enabled by applying a low TTL or CMOS level to the sleep pin, the
output is turned off and supply current is further reduced to less than 15 µA.
The REF19x ries references are specified over the extended industrial temperature range (–40°C to +85°C) with typical performance specifications over –40°C to +125°C for applica-tions such as automotive.
All electrical grades are available in 8-Lead SOIC; the PDIP and TSSOP are only available in the lowest electrical grade. Prod-ucts are also available in die form.
Test Pins (TP)
The test pins, Pin 1 and Pin 5, are rerved for in-package zener-zap. To achieve the highest level of accuracy at the out-put, the zener-zapping technique is ud to trim the output voltage. Since each unit may require a different amount of ad-justment, the resistance value at the test pins will vary widely from pin-to-pin as well as from part-to-part. The ur should not make any physical nor electrical connections to Pin 1 and Pin 5.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781/329-4700World Wide Web Site: Fax: 781/326-8703© Analog Devices, Inc., 1999
REF19x Series
–2–
REV. D
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS Parameter
Symbol Condition Min Typ Max Units INITIAL ACCURACY 1“E” Grade V O水星路由器登录
I OUT = 0 mA
2.046 2.048
2.050V “F” Grade 2.043 2.053V “G” Grade 2.038
2.058V LINE REGULATION 2“E” Grade
∆V O /∆V IN 3.0 V ≤ V S ≤ 15 V, I OUT = 0 mA
24ppm/V “F & G” Grades 48ppm/V LOAD REGULATION 2
“E” Grade
∆V O /∆V LOAD V S = 5.0 V, 0 ≤ I OUT ≤ 30 mA 410ppm/mA “F & G” Grades 6平凉特产
15ppm/mA DROPOUT VOLTAGE
V S – V O
V S = 3.15 V, I LOAD = 2 mA 0.95V V S = 3.3 V, I LOAD = 10 mA 1.25V V S = 3.6 V, I LOAD = 30 mA 1.55
V LONG-TERM STABILITY 3∆V O 1000 Hours @ +125°C 1.2mV NOISE VOLTAGE
e N
0.1 Hz to 10 Hz
20
µV p-p
NOTES 1
Initial accuracy includes temperature hysteresis effect.2
Line and load regulation specifications include the effect of lf-heating.3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125°C, with an LTPD of 1.3.Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS Parameter
Symbol Condition Min Typ Max Units TEMPERATURE COEFFICIENT 1, 2“E” Grade TCV O /°C
I OUT = 0 mA
25ppm/°C “F” Grade 510ppm/°C “G” Grade 31025ppm/°C LINE REGULATION 4“E” Grade
∆V O /∆V IN 3.0 V ≤ V S ≤ 15 V, I OUT = 0 mA
510ppm/V “F & G” Grades 1020ppm/V LOAD REGULATION 4“E” Grade
∆V O /∆V LOAD V S = 5.0 V, 0 ≤ I OUT ≤ 25 mA 515ppm/mA “F & G” Grades 10
20ppm/mA DROPOUT VOLTAGE
V S – V O
V S = 3.15 V, I LOAD = 2 mA 0.95V V S = 3.3 V, I LOAD = 10 mA 1.25V V S = 3.6 V, I LOAD = 25 mA
1.55
V SLEEP PIN
Logic High Input Voltage V H 2.4
V Logic High Input Current I H –8µA Logic Low Input Voltage V L 0.8V Logic Low Input Current I L
–8µA SUPPLY CURRENT No Load 45µA Sleep Mode
No Load
15
µA
NOTES 1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.2
TCV O is defined as the ratio of output change with temperature variation to the specified temperature range expresd in ppm/°C.
TCV O = (V max–V min )/V O (T MAX –T MIN ).
3
Guaranteed by characterization.4
Line and load regulation specifications include the effect of lf-heating.Specifications subject to change without notice.
(@ V S
= 3.3 V, T A
= +25؇C unless otherwi noted)
(@ V S
= 3.3 V, –40؇C ≤ T A
≤ +85؇C unless otherwi noted)
REF19x Series REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V S = 3.3 V, –40؇C ≤T A≤ +125؇C unless otherwi noted)
Parameter Symbol Condition Min Typ Max Units TEMPERATURE COEFFICIENT1, 2
“E” Grade TCV O/°C I OUT = 0 mA2ppm/°C “F” Grade5ppm/°C “G” Grade310ppm/°C LINE REGULATION4
“E” Grade∆V O/∆V IN 3.0 V ≤ V S≤ 15 V, I OUT = 0 mA10ppm/V “F & G” Grades20ppm/V LOAD REGULATION4
“E” Grade∆V O/∆V LOAD V S = 5.0 V, 0 ≤ I OUT≤ 20 mA10ppm/mA “F & G” Grades20ppm/mA DRO
POUT VOLTAGE V S – V O V S = 3.3 V, I LOAD = 10 mA 1.25V
V S = 3.6 V, I LOAD = 20 mA 1.55V NOTES
1For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2TCV
is defined as the ratio of output change with temperature variation to the specified temperature range expresd in ppm/°C.
O
TCV O = (V max–V min)/V O (T MAX–T MIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of lf-heating.
Specifications subject to change without notice.
REV. D–3–
REF19x Series
–4–
REV. D
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS Parameter
Symbol Condition Min Typ Max Units INITIAL ACCURACY 1“E” Grade V O
I OUT = 0 mA
2.498 2.500 2.502V “F” Grade 2.495 2.505V “G” Grade 2.490 2.510
V LINE REGULATION 2
“E” Grade
∆V O /∆V IN 3.0 V ≤ V S ≤ 15 V, I OUT = 0 mA
2
4ppm/V “F & G” Grades 48ppm/V LOAD REGULATION 2“E” Grade
∆V O /∆V LOAD V S = 5.0 V, 0 ≤ I OUT ≤ 30 mA 410ppm/mA “F & G” Grades 6
15ppm/mA DROPOUT VOLTAGE V S – V O V S = 3.5 V, I LOAD = 10 mA 1.00V V S = 3.9 V, I LOAD = 30 mA 1.40
当兵体检项目有哪些V LONG-TERM STABILITY 3∆V O 1000 Hours @ +125°C 1.2mV NOISE VOLTAGE
e N
0.1 Hz to 10 Hz
25
µV p-p
NOTES 1
Initial accuracy includes temperature hysteresis effect.2
Line and load regulation specifications include the effect of lf-heating.3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125°C, with an LTPD of 1.3.Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS Parameter
Symbol Condition Min Typ Max Units TEMPERATURE COEFFICIENT 1, 2“E” Grade TCV O /°C
I OUT = 0 mA
25ppm/°C “F” Grade 510ppm/°C “G” Grade 31025ppm/°C LINE REGULATION 4“E” Grade
∆V O /∆V IN 3.0 V ≤ V S ≤ 15 V, I OUT = 0 mA
510ppm/V “F & G” Grades 1020ppm/V LOAD REGULATION 4“E” Grade
∆V O /∆V LOAD V S = 5.0 V, 0 ≤ I OUT ≤ 25 mA 515ppm/mA “F & G” Grades 10
20ppm/mA DROPOUT VOLTAGE V S – V O
V S = 3.5 V, I LOAD = 10 mA 1.00V V S = 4.0 V, I LOAD = 25 mA
1.50
V SLEEP PIN
Logic High Input Voltage V H 2.4
V Logic High Input Current I H –8µA Logic Low Input Voltage V L 0.8V Logic Low Input Current I L
–8µA SUPPLY CURRENT No Load 45µA Sleep Mode
No Load
15
µA
NOTES 1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.2
TCV O is defined as the ratio of output change with temperature variation to the specified temperature range expresd in ppm/°C.
TCV O = (V max–V min )/V O (T MAX –T MIN ).
3
Guaranteed by characterization.4
Line and load regulation specifications include the effect of lf-heating.Specifications subject to change without notice.
(@ V S
= 3.3 V, T A
= +25؇C unless otherwi noted)
(@ V S
= 3.3 V, T A
= –40؇C ≤ T A
≤ +85؇C unless otherwi noted)
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS Parameter
Symbol Condition Min Typ Max Units TEMPERATURE COEFFICIENT 1, 2“E” Grade TCV O /°C
I OUT = 0 mA
2ppm/°C “F” Grade 5ppm/°C “G” Grade 310ppm/°C LINE REGULATION 4“E” Grade
∆V O /∆V IN 3.0 V ≤ V S ≤ 15 V, I OUT = 0 mA
10ppm/V “F & G” Grades 20ppm/V LOAD REGULATION 4“E” Grade
∆V O /∆V LOAD V S = 5.0 V, 0 ≤ I OUT ≤ 20 mA 10ppm/mA “F & G” Grades 20
ppm/mA
DROPOUT VOLTAGE
V S – V O
V S = 3.5 V, I LOAD = 10 mA 1.00V V S = 4.0 V, I LOAD = 20 mA
1.50V
NOTES 1
For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.2
TCV O is defined as the ratio of output change with temperature variation to the specified temperature range expresd in ppm/°C.
TCV O = (V max–V min )/V O (T MAX –T MIN ).
3
Guaranteed by characterization.4
Line and load regulation specifications include the effect of lf-heating.Specifications subject to change without notice.
REF19x Series
华是多音字吗–5–
REV. D
(@ V S
= 3.3 V, –40؇C ≤ T A
≤ +125؇C unless otherwi noted)
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol Condition Min Typ Max Units INITIAL ACCURACY 1“G” Grade
V O
I OUT = 0 mA
2.990
3.0 3.010V LINE REGULATION 2“G” Grades
∆V O /∆V IN 3.3 V, ≤ V S ≤ 15 V, I OUT = 0 mA 48ppm/V LOAD REGULATION 2“G” Grade
∆V O /∆V LOAD
V S = 5.0 V, 0 ≤ I OUT ≤ 30 mA 6
15ppm/mA DROPOUT VOLTAGE V S – V O
V S = 3.8 V, I LOAD = 10 mA 0.80V V S = 4.0 V, I LOAD = 30 mA 1.00
V LONG-TERM STABILITY 3∆V O
1000 Hours @ +125°C 1.2mV NOISE VOLTAGE
e N
0.1 Hz to 10 Hz
鸭肝的热量消防改革吧30
µV p-p
NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of lf-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125°C, with an LTPD of 1.3.Specifications subject to change without notice.
(@ V S = 3.3 V, T A = +25؇C unless otherwi noted)
