内部控制的概念
11/12/01
Supertex Inc. does not recommend the u of its products in life support applications and will not knowingly ll its products for u in such applications unless it receives an adequate "products liability
N-Channel Enhancement-Mode Vertical DMOS FETs
TN2540Low Threshold
Ordering Information
Features
❏Low threshold — 2.0V max.❏High input impedance
❏Low input capacitance — 125pF max.❏Fast switching speeds ❏Low on resistance
❏Free from condary breakdown ❏Low input and output leakage
❏Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage
± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from ca for 10 conds.
BV DSS /R DS(ON)V GS(th)I D(ON)BV DGS (max)梅兆荣
(max)(min)TO-92TO-243AA*Die †400V
12Ω
2.0V
1.0A
TN2540N3
TN2540N8
TN2540ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available.
Order Number / Package
Applications
❏Logic level interfaces – ideal for TTL and CMOS ❏Solid state relays ❏Battery operated systems ❏Photo voltaic drives ❏Analog switches
❏General purpo line drivers ❏Telecom switches
Package Options
Low Threshold DMOS Technology
The low threshold enhancement-mode (normally-off) transis-tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, the devices are free from thermal runaway and thermally induced condary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Product marking for TO-243AA
Where ❋ = 2-week alpha date code
TN5D ❋
TN2540
OUTPUT INPUT
OUTPUT
10V
V DD
0V
0V
Symbol Parameter Min Typ Max Unit Conditions
BV DSS
400V V GS = 0V, I D = 100µA V GS(th)Gate Threshold Voltage0.6 2.0V V GS = V DS, I D= 1mA小数简便运算
∆V GS(th)Change in V GS(th) with Temperature-2.5-4.0mV/°C V GS = V DS, I D= 1mA
I GSS Gate Body Leakage100nA V GS = ± 20V, V DS = 0V
匠心品质I DSS Zero Gate Voltage Drain Current10µA V GS = 0V, V DS = Max Rating
1.0mA V GS = 0V, V DS = 0.8 Max Rating
T A = 125°C
I D(ON)ON-State Drain Current0.30.5V GS = 4.5V, V DS = 25V
0.75 1.0V GS = 10V, V DS = 25V
R DS(ON)8.012V GS = 4.5V, I D = 150mA
8.012V GS = 10V, I D = 500mA
∆R DS(ON)Change in R DS(ON) with Temperature0.75%/°C V GS = 10V, I D = 500mA
G FS Forward Transconductance125200m V DS = 25V, I D = 100mA
C ISS Input Capacitance95125
C OSS Common Source Output Capacitance2070pF
C RSS Rever Transfer Capacitance1025
t d(ON)Turn-ON Delay Time20
t r Ri Time15
t d(OFF)Turn-OFF Delay Time25血脂康胶囊说明书
古人练胆量的方法t f Fall Time20
V SD Diode Forward Voltage Drop 1.8V V GS = 0V, I SD = 200mA t rr Rever Recovery Time300ns V GS = 0V, I SD = 1A
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwi stated. (Pul test: 300µs pul, 2% duty cycle.)
2.All A.C. parameters sample tested.生存的近义词
A
Thermal Characteristics
Switching Waveforms and Test Circuit
Drain-to-Source
Breakdown Voltage
V GS = 0V, V DS = 25V
f = 1 MHz
V DD = 25V,
I D = 1A,
R GEN = 25Ω
ns
Static Drain-to-Source
ON-State Resistance
Package I D (continuous)*I D (puld)Power Dissipationθjcθja I DR*I DRM
@ T A = 25°C°C/W°C/W TO-92175mA 2.0A 1.0W125170175mA 2.0A TO-243AA260mA 1.8A 1.6W†1578†260mA 1.8A
旦字组词
* I
D
(continuous) is limited by max rated T
j
.
†Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increa possible on ceramic substrate.
Electrical Characteristics(@ 25°C unless otherwi specified)
Ω
Ω
TN2540 Typical Performance Curves
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
11/12/01
Typical Performance Curves
TN2540
