专利名称：Vertical transistor and a miconductor
integrated circuit apparatus having the same
发明人：Masahiro Sakuragi,Masahiko Sonoda
淡水虾养殖
申请号：US11116357
全面发展教育申请日：20050428
公开号：US07521747B2
胃火旺怎么调理公开日：
烩丸子的家常做法
20090421
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专利附图：
摘要：AMOS transistor compris: a first conduction type region; a cond conduction type drain re
gion formed on the outermost layer portion of the first conduction type region; a cond conduction type source region formed on the outermost layer portion
of the first conduction type region with a channel region provided between the cond conduction type drain region and the cond conduction type source region; agate electrode formed on the channel region; a cond conduction type ba region formed inside of the cond conduction type drain region in plan elevation; a plurality of first conduction type emitter regions formed in the cond conduction type ba region on the outermost layer portion thereof at spatial intervals in a predetermined direction; and a drain contact connected to, as lying astride, adjacent two first conduction type emitter regions and that portion of the cond conduction type drain region between the adjacent two first conduction type emitter regions.排骨炖萝卜的做法
申请人：Masahiro Sakuragi,Masahiko Sonoda
个人汇报材料地址：Kyoto JP,Kyoto JP
国籍：JP,JP
代理机构：Rabin & Berdo, PC
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