专利名称：An improved method for making high-density nonvolatile memory
发明人：MAITREYEE MAHAJANI,S. BRAD
虚心反义词HERNER,MICHAEL A. VYVODA泽泻>入团程序
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申请号：AU2003296988
申请日：20031212
公开号：AU2003296988A8
象棋世家公开日：
亲情友情爱情
高丝莱菲20040729
专利内容由知识产权出版社提供
摘要：An improved nonvolatile memory cell made by a method for fabricating a three dimensional monolithic memory with incread density. The memory cell includes at least a part of a first conductor, a miconductor element, and at least a part of a cond conductor. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming miconductor elements, preferably comprising two diode portions, optionally forming an antifu above or below both of the diode portions, and then filling and planarizing; and continuing to form conductors and miconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreas aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
申请人：MATRIX SEMICONDUCTOR, INC
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