N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
•Halogen-free Option Available •TrenchFET ® Gen II Power MOSFET
•New Low Thermal Resistance PowerPAK ®
Package with Low 1.07 mm Profile •100 % R g Tested
APPLICATIONS
•Synchronous Rectification
PRODUCT SUMMARY
V DS (V)R DS(on) (Ω)I D (A)Q g (Typ.)
30
0.0075 at V GS = 10 V 18.312.5
0.010 at V GS = 4.5 V
15.9
Notes:
a.Surface Mounted on 1" x 1" FR4 board.
b.See Solder Profile (/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is expod copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the expod copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwi noted
Parameter
Symbol 10 s
Steady State
Unit Drain-Source Voltage V DS 30V
Gate-Source Voltage
V GS ± 20
Continuous Drain Current (T J = 150 °C)a T A = 25 °C I
D 18.311.7A
T A = 70 °C
14.7
9.4
Puld Drain Current
邀请函怎样写
I DM 60
Continuous Source Current (Diode Conduction)a I S 3.2
1.3
Single Avalanche Current L = 0 1 mH I AS 29Single Avalanche Energy E AS 42
mJ Maximum Power Dissipation a
T A = 25 °C P D 3.8 1.5W T A = 70 °C 2.0
0.8
Operating Junction and Storage T emperature Range T J , T stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)b, c
260
THERMAL RESISTANCE RATINGS
马一丁
Parameter Symbol T ypical Maximum Unit
Maximum Junction-to-Ambient a t ≤ 10 s R thJA 2433°C/W
Steady State 6581Maximum Junction-to-Ca (Drain)
Steady State
R thJC
1.9
2.4
Notes:
马尼拉海沟
a. Pul test; pul width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stress beyond tho listed under “Absolute Maximum Ratings” may cau permanent damage to the device. The are stress ratings only, and functional operation of the device at the or any other conditions beyond tho indicated in the operational ctions of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwi noted
Parameter Symbol T est Conditions Min.T yp.Max.
Unit
Static
Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1
3V
唐僧图片Gate-Body Leakage
I GSS V DS = 0 V , V GS = ± 20 V ± 100 nA航天奇观
Zero Gate Voltage Drain Current I DSS V DS = 30 V , V GS = 0 V 1µA V DS = 30 V, V GS = 0 V , T J = 55 °C
5
On-State Drain Current a
I D(on) V DS ≥ 5 V , V GS = 10 V 40
A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 18.3 A 0.00620.0075ΩV GS = 4.5 V, I D = 15.9 A 0.00810.010
Forward T ransconductance a g fs V DS = 15 V , I D = 18.3 A 77S Diode Forward Voltage a V SD
I S = 3.2 A, V GS = 0 V
0.7
1.2V
Dynamic b
Total Gate Charge Q g V DS = 15 V , V GS = 4.5 V , I D = 18.3 A
12.519
nC
Gate-Source Charge Q gs 6.3Gate-Drain Charge Q gd 3.6Gate Resistance R g f = 1 MHz
0.7
1.4
2.1Ω
猪蹄火锅
Turn-On Delay Time t d(on) V DD = 15 V , R L = 15 Ω
I D ≅ 1 A, V GEN = 10 V , R g = 6 Ω
1015ns Ri Time
t r 1015Turn-Off Delay Time t d(off) 4570Fall Time
制作灯笼的材料
t f 1015Source-Drain Rever Recovery Time t rr I F = 3.2 A, di/dt = 100 A/µs 3060Body Diode Rever Recovery Charge
Q rr
I F = 3.2 A, di/dt = 100 A/µs 19
38
nC Output Characteristics Transfer Characteristics
TYPICAL CHARACTERISTICS 25°C, unless otherwi noted
On-Resistance vs. Gate-to-Source Voltage
TYPICAL CHARACTERISTICS 25°C, unless otherwi noted
Normalized Thermal Transient Impedance, Junction-to-Ca
Vishay Sil iconix maintains worl dwide manufacturing capabil ity. Products may be manufactured at one of veral qual ified l ocations. Rel iabil ity data for Sil icon Technology and Package Reliability r
eprent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, e /ppg?73039.
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