48R
HAL248R
to 6the following on a single silicon chip HAL2
Hall-effect nsor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity
micro-power switch. Superior high-temperature performance is made possible through a dynamic offt cancellation that utilizes chopper-stabilization. This method reduces the offt voltage normally caud by device over molding, temperature dependencies, and thermal stress.
is special made for low operation voltage, 1.65V , to active the chip which is includes : voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is ud to take advantage of low-voltage requirements, component matching, very low input-offt errors, and small component geometries. This device requires the prence of omni-polar magnetic fields for operation.
The package type is in a Halogen Free version has been verified by third party Lab.
Features and Benefits
● CMOS Hall IC Technology ● Strong RF noi protection
● 1.65 V for battery-powered applications护理实习报告
● Omni polar, output switches with absolute value of North or South pole from magnet ● Operation down to 1.65V , Micro power consumption ● High Sensitivity for reed switch replacement applications ● Multi Small Size option
●
Low nsitivity drift in crossing of Temp. range
●
Ultra Low power consumption at 5uA (Avg) ● High ESD Protection, HBM > ±4KV( min ) ● Totem-pole output
Applications
● Solid state switch
● Handheld Wireless Handt Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video
Set)
● Lid clo nsor for battery powered devices
● Magnet proximity nsor for reed switch replacement in low duty cycle applications ● Water Meter ● Floating Meter ● PDVD ● NB商业英语单词
48R HAL2
707061.65.87/ UA
C1：10nF C2：100pF
Absolute Maximum Ratings At(Ta=25℃)
Characteristics
Values Unit Supply voltage,(V DD ) V Output V oltage,(V out )
V Rever V oltage , (V DD ) (V OUT ) -0.3 V Magnetic flux density Unlimited
Gauss Output current,(I OUT )
1 mA
Operating temperature range, (Ta ) -40 to +85 ℃ Storage temperature range, (Ts ) -65 to +150
℃ Maximum Junction Temp,(Tj ) 150
℃
Thermal Resistance
(θJA ) S 310 / 540 / 206 / 543 ℃/W (θJC ) 223 / 390 / 148 / 410 ℃/W Package Power Dissipation, (P D )
400 / 230 / 606 / 230
mW
Note: Exceeding the absolute maximum ratings may cau permanent damage. Exposure to absolute maximum- rated conditions for extended periods may affect device reliability.
Electrical Specifications
DC Operating Parameters ：Ta=25℃, V DD =1V
Parameters
Test Conditions
Min
Typ
Max
Units
Supply V oltage,(V DD ) Operating V Supply Current,(I DD ) Awake State 1.4 3 mA Sleep State 3.6 7 μA Average 5 10 μA Output Leakage Current,(I off ) Output off购置税计算方法
1
uA Output High Voltage,(V OH ) I OUT =0.5mA(Source) V DD -0.2
V Output Low Voltage,(V OL ) I OUT =0.5mA(Sink) 0.2 V Awake mode time,(T aw ) Operating 40 uS Sleep mode time,(T SL ) Operating 40 mS Duty Cycle,(D,C )
0.1 % Electro-Static Discharge
HBM
4
KV
鲜虾馄饨
Typical Application circuit
大学生就业率
阴暗的近义词Vcc
T / UA
ST / UA ST
7HAL248R
248R 40
40
4040
40402
206V
ST Package EST
Magnetic Specifications
DC Operating Parameters ：Ta=25℃, V DD =1.8V
Parameter
Symbol
Test Conditions
Min.
Typ.
Max. Units
Operating
Point
B OPS N
pole to
branded side,
B > BOP, V out On
Gauss B OPN
S pole to branded side,
B > BOP, V out On
-
-0 Gauss Relea
Point
B RPS
N pole to branded side,
B < BRP, V out Off 10
20 Gauss
B RPN S
pole to branded side,
B < BRP, V out Off
-20
-10
Gauss
Hysteresis
B HYS
|BOPx -
BRPx|
10
Gauss
Output Behavior versus Magnetic Pol ar
DC Operating Parameters ：Ta
= -40 to 85℃, Vdd
=1.8V
to
Parameter
Test condition
OUT(ST)
Test condition
OUT(SN)
South pole
B<Bop[(-)~(-10)]
Low
B<Bop[(-)~(-10)] Low Null or weak magnetic field
B=0 or B < BRP
High
B=0 or B < BRP
High
North pole
B>Bop(~10)
Low
B>Bop(~10)
Low
North Pole South Pole
Vsat
Magnetic Flux Density in Gauss
248REST
4
Performance Graph
Typical Supply Voltage(V DD ) Versus Flux Density
脾虚的原因
Typical Temperature(T A ) Versus Flux Density
Typical Temperature(T A ) Versus Supply Current(I DD )
Typical Supply Voltage(V DD ) Versus Supply Current(I DD )
Typical Supply Voltage(V DD ) Versus Output Voltage(V DSON )
Typical Temperature(T A ) Versus Output Voltage(V DSON )
斗鱼养殖HALLWEE Electronics CO, . LTD
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Package Power Dissipation
The power dissipation of the Package is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, R θJA , the thermal resistance from the device junction to ambient, and the operating temperature, Ta. Using the values provided on the data sheet for the package, PD can be calculated as follows:
a
j J(max)D R Ta -T P θ=
The values for the equation are found in the maximum ratings table on the data sheet. Substituting the values into the equation for an ambient temperature Ta of 25°C, one can calculate the power dissipation of the device which in this ca is 400 milliwatts.
400mW C/310C
25-C 150(ST)P W D =°°°=
The 310℃/W for the ST package assumes the u of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 400 milliwatts. There are other alternatives to achieving higher power dissipation from the Package. Another alternative would be to u a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
