专利名称：Resistive Switching Random Access Memory
with Asymmetric Source and Drain
发明人：Chin-Chieh Yang,Hsia-Wei Chen,Chih-Yang
考虑到英语Chang,Kuo-Chi Tu,Wen-Ting Chu,Yu-Wen
Liao嗤之以鼻
申请号：US15292964
申请日：20161013
公开号：US20170033159A1
qq好友辅助公开日：
国家放假安排
公证处公证杨修20170202
专利内容由知识产权出版社提供
价格的英文专利附图：
摘要：A resistive random access memory (RRAM) structure includes a resistive
memory element formed on a miconductor substrate and designed for data storage. The resistive element includes a resistive material layer. The resistive element further includes first and cond electrodes interpod by the resistive material layer. The resistive element further includes a field effect transistor (FET) formed on the miconductor substrate and coupled with the resistive memory element, wherein the FET includes asymmetric source and drain, the drain having a higher doping concentration than the source. The resistive memory element is coupled with the drain.修辞手法都有哪些
申请人：Taiwan Semiconductor Manufacturing Company., Ltd.
地址：Hsin-Chu TW
国籍：TW
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