专利名称：Diffusion break forming after source/drain
forming and related IC structure
倾我一生一世念
发明人：George R. Mulfinger,Jin Z. Wallner虾皮怎么吃补钙
骑驴看账本
申请号：US15397978
申请日：20170104
公开号：US09917103B1
公开日：
20180313
清汤牛肉火锅>梦见吃糖专利内容由知识产权出版社提供
专利附图：
摘要：Methods of forming a diffusion break are disclod. The method includes离别时的诗句
forming a diffusion break after source/drain formation, by removing a gate stack of the dummy gate to a buried insulator of an SOI substrate, creating a first opening; and filling百慕大群岛
the first opening with a dielectric to form the diffusion break. An IC structure includes the diffusion break in contact with an upper surface of the buried insulator. In an optional embodiment, the method may also include simultaneously forming an isolation in an active gate to an STI in the SOI substrate.
申请人：GLOBALFOUNDRIES INC.
地址：Grand Cayman KY
国籍：KY
代理机构：Hoffman Warnick LLC
代理人：Yuanmin Cai逼xxx
更多信息请下载全文后查看
