专利名称：SELF DC-BIAS HIGH FREQUENCY LOGIC
杭州教育平台GATE, HIGH FREQUENCY NAND GATE AND
HIGH FREQUENCY NOR GATE
六国文字发明人：Yuan-Hung Chung
申请号：US11160877
申请日：20050714春诗
公开号：US20060197557A1
公开日：
20060907小巴掌童话读后感
专利内容由知识产权出版社提供
何润东张钧甯
专利附图：形容亲密的成语
摘要：A lf DC-bias high frequency logic gate is disclod. The logic gate compris at least one input terminal and one output terminal for performing Boolean operation onl型衣帽间
the high frequency input signals. The logic gate is characterized in that each transistor is coupled to an impedance matching network. The impedance matching network compris a first terminal and a cond terminal. Wherein, the first terminal is coupled to a gate of the transistor, and the cond terminal is coupled to a drain of the transistor for providing an operation voltage to the transistor. When a gate of an N-type transistor and a gate of a P-type transistor are coupled with each other, and a drain of the N-type transistor and a drain of the P-type transistor are also coupled with each other, a common impedance matching network is shared with both the N-type transistor and the P-type transistor.
申请人：Yuan-Hung Chung
地址：Hsinchu County 310 TW雨人坎普
国籍：TW
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