专利名称：RAISED SOURCE/DRAIN REGIONS IN MOS DEVICE黑木秀彦
发明人：SRIDHAR, Seetharaman,MANSOORI, Majid 申请号：US2008064082
申请日：20080519
分红协议公开号：WO08/144629P1
感谢师傅的话公开日：
工程监理日志范本
20081127
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摘要：Provided is a method for manufacturing a miconductor device that includes a substrate (210) having a PMOS device region (220) and NMOS device region (260). A first gate structure (240) including a first hardmask (248) and a cond gate structure (280) including a cond hardmask (288) are formed in the region and region, respectively. Epitaxial SiGe regions (610) are created in the substrate proximate the first gate structure, the first hardmask protecting the first gate structure from the SiGe. First source/drain regions (410, 1020) are formed proximate the first gate structure, at least a portion of each of the first source/drain regions located within one of the SiGe regions. Additionally, a raid portion (710) is grown above the substrate proximate the cond gate structure, the portion forming at least a part of cond source/drain regions (820, 1120) located on opposing sides of the cond gate structure. Additionally, the first and cond hardmasks protect the first and cond gate structures from the growing.
高中生如何赚钱申请人：SRIDHAR, Seetharaman,MANSOORI, Majid
地址：P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 US,4424 Cedar Elm Circle Richardson, TX 75082 US,9000 Vantage Point Drive, Suite 1121 Dallas, TX 75243 US
邯郸疫情国籍：US,US,US
代理机构：FRANZ, Warren, L.更多信息请下载全文后查看dnf多少级转职
