专利名称：ESD implantation in deep-submicron CMOS
technology for high-voltage-tolerant
applications老年人医疗保险
发明人：Ming-Dou Ker,Tung-Yang Chen,Hun-Hsien
Chang丢勒作品
申请号：US10323422
申请日：20021219
青睐的意思>微信网名男生成熟稳重公开号：US06838734B2
公开日：
20050104
专利内容由知识产权出版社提供
专利附图：
摘要：High-voltage-tolerant ESD protection devices (ESDPD) for deep-submicron
什么的童年CMOS process were activated between LDD implanting and forming sidewall spacers. ESD-Implant (ESDI) regions are located at the ESDPD, without covering the center region under the drain contact (DC). The ESDI LDD concentration and doping profile are deep to contain drain diffusion. Regions with the ESDI have a high junction breakdown voltage (JBV) and a low junction capacitance. After forming gate sidewall spacers, high doping concentration ions implanted into active D/S regions formed a shallower doping profile of the D/S diffusion. The drain has a JBV as without this ESDI, so the ESD current (ESDC) is discharged through the center junction region under the DC to bulk, far from the ESDPD surface channel region. The ESDPD sustains a high ESD level. In an original drain JBV of an MOS this ESDI method is unchanged, i.e. the same as that having no such ESDI, so it can be ud in I/O circuits with high-voltage signals in the deep-submicron CMOS. The ESD level of the IO ESDPD improves. The ESD discharge current path in the MOS device structure improves the ESD level in the output buffer MOS. ESDI regions are located at the output MOS devices, without covering the region under the DC. Regions under the DC without this ESDI have an unchanged JBV, so the ESDC discharges through the junction region under the DC to bulk. The original drain JBV of t
七夕图片
he output MOS with this ESDI method is unchanged, which is still the same as that having no such ESDI, to be ud in the I/O circuits with high-voltage (5V) input signals in the deep-submicron CMOS with 3.3V or 2.5V VDD. This applies to diodes, FOD and lateral BJT devices.
申请人：Ming-Dou Ker,Tung-Yang Chen,Hun-Hsien Chang
地址：Hsinchu TW,Hsinchu TW,Shijr TW
国籍：TW,TW,TW
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