田奇念什么专利名称：Recess gate transistor
小弟弟
发明人：Ji-Young Min,Si-Hyung Lee,Heedon
扇贝的做法Hwang,Si-Young Choi,Sangbom
Kang,Dongsoo Woo
莴笋种子
申请号：US12251054
申请日：20081014
苏杰公开号：US08012828B2
公开日：
相见争如不见
20110906
专利内容由知识产权出版社提供
专利附图：
摘要：A recess gate of a miconductor device is provided, comprising: a substrate having a recess formed therein; a metal layer formed at the bottom of the recess; a
polysilicon layer formed over the metal layer; and a source region and a drain region formed adjacent to the polysilicon layer and spaced from the metal layer. A method of forming a miconductor device is also provided, comprising forming a substrate and a source and drain layer; forming a recess and depositing a gate insulation layer therein; forming a first conductive layer on the gate insulation layer; forming a first conductive layer pattern by recessing the first conductive layer; forming a cond conductive layer on the first conductive layer pattern; forming a cond conductive layer pattern by patterning the cond conductive layer to overlap the source and drain layer; depositing an insulating layer on the cond conductive layer pattern and the source and drain layer; and planarizing the insulating layer to form a cap on the cond conductive layer pattern.
申请人：Ji-Young Min,Si-Hyung Lee,Heedon Hwang,Si-Young Choi,Sangbom
swftextKang,Dongsoo Woo
地址：Suwon-si KR,Suwon-si KR,Seoul KR,Seongnam-si KR,Seoul KR,Seoul KR
国籍：KR,KR,KR,KR,KR,KR
代理机构：F. Chau & Associates, LLC
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