半导体曝光机NSR系列

更新时间:2023-05-15 04:50:19 阅读: 评论:0

i-line Scan Field Stepper
i-line scan field stepper utilizes innovative platform and highspeed wafer stage to deliver maximized throughput
The NSR-SF155 i-line scan field stepper employs Skyhook Technology, where the lens module is suspended from the main body to eliminate the influence of ground or stage vibration. Coupled with incread wafer stage speed and enhanced chamber temperature stability, this system delivers throughput of ≥ 200 wafers per hour (300 mm), with optimal overlay performance.
Precision Equipment Company Global Network
b NIKON PRECISION EUROPE GmbH (Germany)
NIKON PRECISION KOREA LTD. (Korea) NIKON CORPORATION b NIKON TEC CORPORATION (Japan) NIKON PRECISION TAIWAN LTD. (Taiwan) b NIKON PRECISION INC. (U.S.A.)
b NIKON PRECISION SHANGHAI CO., LTD. (China) b b
Main Characteristics
• Superior throughput Combining an optimized stepper platform with Skyhook Technology and a faster wafer stage has minimized vibration effects, while boosting stepper productivity. The NSR-SF155 enables superior throughput of ≥200 wafers per hour (300 mm). • High overlay accuracy The NSR-SF155 employs the Skyhook platform paired with a stage countermass, enhanced chamber heat controls, and optimized airflow to maintain overlay accuracy of 25 nm or better. • Low total cost of ownership Maximized yield is achieved with improved chamber heat controls and optimized throughput, thereby enabling the NSR-SF155 to deliver the lowest total cost of ownership. To further increa value, Nikon has developed a solution that enables customers to upgrade existing NSR-SF150 systems on their production lines to the NSR-SF155 configuration.
b NIKON PRECISION SINGAPORE PTE LTD. (Singapore)
木耳英文NIKON CORPORATION
Precision Equipment Company Planning Department
Shin-Yurakucho Bldg., 12-1, Yurakucho 1-chome, Chiyoda-ku, Tokyo 100-8331, Japan Tel: +81-3-3216-1344 Fax: +81-3-3216-1059
NIKON PRECISION TAIWAN LTD.
3F-1, 2, 3, 5 No.28, Tai Yuen Street, Chu Pei City, Hsin Chu Hsien, Taiwan Tel: +886-3-552-5888 Fax: +886-3-552-5858
NIKON PRECISION SINGAPORE PTE LTD.
29 Woodlands I ndustrial Park E1, Northtech Lobby 3 #4-17, Singapore 757716 Tel: +65-6367-4020 Fax: +65-6367-4021
NIKON PRECISION INC.缝多音字
IC Production Equipment
Performance
1399 Shoreway Road, Belmont, CA 94002-4107, U.S.A. Tel: +1-(650)-508-4674 Fax: +1-(650)-508-4600
NIKON PRECISION SHANGHAI CO., LTD.
RM.601 Xin Jin Qiao Tower, No.28 Xin Jin Qiao Road, Pudong New District, Shanghai 201206, China Tel: +86-21-5899-0266 Fax: +86-21-5899-1660
NIKON PRECISION EUROPE GmbH
Paul-Ehrlich-Str. 3-5, 63225 Langen, Germany Tel: +49-6103-973-0 Fax: +49-6103-973-333
NIKON PRECISION KOREA LTD.
17-24 Singal-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, Korea Tel: +82-31-288-5601 Fax: +82-31-288-5609
托福与雅思的区别WARNING
任的多音字组词TO ENSURE CORRECT USAGE, READ THE CORRESPONDING MANUALS CAREFULLY BEFORE USING YOUR EQUIPMENT.
i-line
伞下i-line stepper provides a costeffective solution for 350 nm device mass production
The NSR-2205i14E2 i-line stepper is a cost-effective system that delivers a maximum lens numerical aperture of 0.63 and enables resolution of 350 nm and below. With off-axis illumination capabilities a
nd a variable NA, it supports optimization of a range of processing conditions for 350 nm device mass production.
Stepper
The export of this product is controlled by Japane Foreign Exchange and Foreign Trade Law and I nternational export control regime. I t shall not be exported without authorization from the appropriate governmental authorities. Specifications and equipment are subject to change without any notice or obligation on the part of the manufacturer. Products and brand names are trademarks or registered trademarks of their respective companies. November 2010. ©2010 NI KON CORPORATI ON
Specifications
©2010 NI KON CORPORATI ON
jp/pec
Max. 1mW CW He-Ne 633nm
100-8331
140-0012
1-12-1
1-5-21
4F
03 5762-8911
03 3216-1344
This product was developed and manufactured in the factory certified under ISO 9001.
2010-2011
Printed in Japan 4CEJ-SUSH-7 1011-01 T
ArF immersion Scanner
ArF immersion scanner enables 45 nm device mass production with NA of 1.30
The NSR-S610C ArF immersion scanner features a projection lens utilizing immersion lithography technology to deliver an NA of 1.30. The new S610C Tandem Stage delivers maximized throughput, and coupled with Local Fill Technology and the advanced multi-axial catadioptric lens design, enables mass production of the most advanced 45 nm devices and beyond.
ArF immersion Scanner
ArF
Scanner
Main Characteristics
• Through 40 to 45 nm resolution The 1.30 NA optics of the NSR-S610C enable 40 to 45 nm imaging with a k1 process factor of 0.30**. The ultra-high NA enables the S610C to produce all critical layers of 40 to 45 nm devices with sufficient process windows for volume production.
**Resolution = k1 x (wavelength/NA), where k1 reprents the process margin. k1 of 0.30 or greater is generally recognized as a requirement for volume production.
ArF scanner with Tandem Stage boosts throughput by 20%, supporting mass production of 65 nm devices and beyond
The NSR-S310F ArF scanner employs the Tandem Stage—initially deployed on renowned Nikon immersion scanners—to boost throughput by 20% compared to conventional models. The 0.92 NA projection optics and POLANO polarization control deliver superior imaging capabilities, while thermal aberration control is further enhanced with optional infrared aberration control (IAC). Enabling throughput greater than 174 wafers per hour, the NSR-S310F provides optimal cost of ownership in the mass production of 65 nm or smaller devices.
ArF immersion scanner with new Streamlign platform enables rapid production ramps required for 32 nm, and provides extendibility to 22 nm applications.
The NSR-S620D incorporates three newly developed technologies* — Bird’s Eye Control, Stream Alignment, and the Modular2 Structure — to make it the optimal immersion scanner for double patterning. The NSR-S620D design builds upon the unique Tandem Stage and Local Fill Technologies employed in the Nikon NSR-S610C, the world’s first ArF Immersion Scanner for 45 nm node volume production.
教师节的来历
*See “Main Characteristics of the Streamlign Platform” below.
Streamlign Platform
• Superior imaging through POLANO polarization and Nikon projection optics The reliable Nikon 1.30 NA catadioptric projection optics, combined with sophisticated POLANO polarization technology, provides superior imaging with low flare and minimizes the impact of thermal aberrations. • High throughput, high accuracy using the Nikon optimized immersion platform Nikon Tandem Stage technology us an exposure stage and a parate calibration stage for high throughput (130 wafers per hour) with optimal stability due to frequent system calibration. • Proven, defect-free immersion exposure Local Fill Technology is proven to eliminate scanner-induced defects such as bubbles, watermarks, and immersion-induced particles from the immersion process.
Performance
Main Characteristics of the Streamlign platform
• Bird’s Eye Control Enabling superior yield • Hybrid encoder/interferometer system delivers optimal stage performance. • Dramatically improves accuracy and stability. • Provides superior focus control. • Targeting 2 nm overlay capabilities.
Performance
Encoder
KrF
Interferometer Wafer Stage
Scanner
• Stream Alignment Enabling optimal affordability • Straight Line Auto-Focus generates a den map of the wafer surface to enhance focus control (using wider AF beam span). • Enables incread alignment sites with minimal productivity impact using Five-Eye FIA. • Greatly reduces wafer overhead time. • Targeting throughput up to 200 wph.
Straight Line Auto-Focus
Technology that delivers revolutionary lens numerical aperture Nikon immersion lithography technology achieves an NA of over 1.0.
Immersion Lithography
Five-Eye FIA
Projection lens
Illumination Unit
• Modular2 Structure Enabling rapid production ramps • Significantly faster installations - 20 day target. • Simplifies maintenance by the modular design. • Provides optimal uptime with modular design and individual components replacement. • Extendible platform enables multigenerational u.
创业思维Reticle Stage
Metrology Frame
Projection Lens
Stepper resolution is normally expresd as resolution = k1 (process coefficient) x (light source wavelength)/NA (numerical aperture: the brightness of the projection lens), where a shorter light source wavelength and a greater projection lens NA produce finer resolution. NA is derived from NA = n x sin , where n is the refractive index of the medium through which the exposure light pass, an
d is the angle the exposure light forms. In air, becau n = 1, a maximum NA of about 0.9 is generally believed to reprent the physical limit. Pure water, however, has a much higher refractive index than air, and placing water between the lens and the wafer improves the NA to 1.0 or greater, resulting in extremely high resolution. This technique is referred to as immersion lithography.
Recovery Pure water
Supply Wafer
KrF scanner increas throughput by 20% with Tandem Stage, enabling volume production of 110 nm or smaller devices
The NSR-S210D KrF scanner employs the Tandem Stage—ud worldwide on immersion scanners—to enhance throughput by 20% compared to conventional models. The 0.82 NA projection optics and illumination system employed ensure exceptional imaging performance with low flare, while the system is also highly resistant to thermal effects. With throughput capabilities of more than 176 wafers per hour, the NSR-S210D greatly reduces KrF cost of ownership for mass production of 110 nm devices and beyond.
Scanning motion
教师业务学习内容
Wafer stage
Projection lens
Performance
Pure water (n=1.44)
Wafer
Immersion Lithography
Resist
ArF excimer lar light
Wafer Stage

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