专利名称：System and method for forming solder bumps
发明人：Eric Peter Lewandowski,Jae-Woong
Nah,Jeng-Bang Yau,Peter Jerome Sorce 申请号：GB202201520
申请日：20200617
公开号：GB2600623A
公开日：
钱钧
象数疗法
20220504
专利内容由知识产权出版社提供英语新年贺卡图片>brainchild
摘要：A method for forming a solder bump (122) includes preparing a transfer mold (100) having a solder pillar (112) extending from a mold substrate (102) and through a first photoresist layer (104) and having a shape partially defined by a cond photoresist layer (108) that is removed prior to transfer of the solder; providing a device substrate (114) having a wettable pad (120); placing the transfer mold (100) and the device substrate (114) into aligned contact such that the solder pillar (112) is in contact with the wettable pad (120); forming a metallic bond between the solder pillar (112) and the wettable pad (120), e.g. by a cold welding process or a reflow process; and removing the mold substrate (102) and the first photoresist layer (104). The mold substrate (102) and the transfer mold (100) may be flexible. The transfer mold may compri at least one of: a wetting layer over the mold substrate (402), in which ca a pillar (112) including aluminum may be deposited and reflowed; a ed layer over the mold substrate (402); and a non-wetting layer over the cond photoresist layer (408). The device substrate (114, 502) may compri a through hole (118, 504) and may be an interpor made of silicon, glass and/or organic substrate material. The method may further compri
游子吟朗诵attaching the interpor (114, 502) to a qubit miconductor device (a superconducting chip) (300, 5饥荒怎么联机
夫子何哂由也
16), wherein the qubit miconductor device (300, 516) compris a Jophson junction (304, 518), and wherein the attaching of the interpor (114, 502) to the qubit miconductor device (300, 516) includes aligning the hole (118, 504) through the interpor (114, 502) with the Jophson junction (304, 518) to provide a path for accessing the Jophson junction (304, 518), in particular to make adjustments to its design frequency. The solder pillar (122) may be one of a plurality of solder pillars that are formed around the hole (118) between the qubit miconductor device (300) and the interpor (114) for providing an amount of thermal isolation of the Jophson junction (304), forming a circular wall (200A, 200B) around the qubits and between the interpor (114) and the superconducting chip (300), wherein the circular wall (200A, 200B) may include at least one gap (202) therethrough. The solder pillar (512) may be one of a plurality of solder pillars (512) of the transfer mold, including a first solder pillar (512) having a first diameter and a cond solder pillar (512) having a cond diameter, the first diameter being larger than the cond diameter. The device substrate (602) may compri a miconductor substrate comprising a deep recess (604), wherein a circuit component (608) may be comprid in the deep recess (604). The preparing of the transfer mold (100) may compri: patterning the first and cond photoresist layers (104, 108) to define a recess (110) that extends through the first and cond photoresist layers (104, 108); and using injection molded soldering (IMS) to fill the recess (110) with solder to form the solder pillar (112). Alte
rnatively, the preparing of the transfer mold may compri: patterning the first and cond photoresist layers (404, 408) to define a recess (410) that extends through the first and cond photoresist layers (404, 408); forming a ed layer, wherein at least a portion of the ed layer is provided in the recess (410); and using electroplating to fill the recess (410) with solder and form the solder pillar. The pillars (112) may also be 3-D metal posts formed by copper plating or copper stud bumps.
刘墉女儿申请人：International Business Machines Corporation 更多信息请下载全文后查看
