FORMATION OF PATTERN

更新时间:2023-05-15 03:56:09 阅读: 评论:0

南通市公积金专利名称:FORMATION OF PATTERN 发明人:KATOU TAKAAKI
申请号:JP1886180
如何给猫洗澡申请日:19800218长阴方
公开号:JPS56115534A
公开日:风不能把阳光打败
气焰的意思19810910
专利内容由知识产权出版社提供手工爱心
摘要:PURPOSE:To obtain the material to be patterned having a tapered ctional form by a method wherein a taper-shaped electron beam resist layer is formed on the material to be patterned having the etching rate of almost equal to the electron beam resist and then an etching is performed. CONSTITUTION:A material layer 12 to be patterned such as an Al and the like, and a negative type electron beam resist layer 13 such as a CPO and the like are formed on a substrate 11 successively. Then an electron beam 14 is irradiated and expod limitedly within the scope of the outlines and form of the pattern, a developing process is performed and a resist pattern 13a, having the ctional form of gradually reduced thickness, is formed. Then, the patterning layer 12a having the similar ctional form to the resist pattern 13a can be obtained by performing an etching on the surface using an ion beam 15. Also, the pattern having the optionally controlled film thickness for each ction of the pattern can be formed easily.
申请人:CHO LSI GIJUTSU KENKYU KUMIAI
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