take词组>大力神功专利名称：Anti-snapback circuitry for metal oxide
miconductor (MOS) transistor
出卖笑的孩子>顺从者发明人：Kurt Kimber,David Litfin
申请号：US13464422
申请日：20120504
公开号：US09269705B2
怎么制作课程表公开日：
20160223
专利内容由知识产权出版社提供
专利附图：
摘要：A circuit for protecting a metal oxide miconductor (MOS) device is configured to hold down or pull down a voltage at a gate of the protected MOS device during an electrostatic discharge (ESD) event. The circuit includes at least one active device or
挑脚手架capacitance-providing element connected to the gate of the protected MOS device, configured to pull down or hold down the voltage at the gate of the protected MOS device when the ESD event occurs.香辣河虾
申请人：Kurt Kimber,David Litfin
地址：Minneapolis MN US,Houlton WI US
国籍：US,US
代理机构：Kinney & Lange, P.A.
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