专利名称：Process for the production of thi关于狼的谚语
n miconductor material films
发明人：Michel Bruel
申请号：US07/945001
申请日：19920915
公开号：US05374564A
公开日：
19941220
专利内容由知识产权出版社提供
摘要：Process for the preparation of thin moncryst装修合同范本
alline or polycrystalline miconductor material films, characterized in that it 蓝宝石多少一克拉
compris subjecting a miconductor material wafer having a planar face to the three foll悲伤的情歌
owing stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a cond stage of intimately contacting the planar刀豆烧土豆
face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the asmbly of said wafer (1) and said stiffener (7) at a temperature above that at whi覆盆子的功效与作用
ch the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the sai用餐英语
d microbubbles, a paration between the thin film (5 ) and the mass of the substrate (6).
申请人：COMMISSARIAT A L'ENERGIE ATOMIQUE
代理机构：Pearne, Gordon, McCoy & Granger
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