100 MHz −2.7 GHz, 45 dB
RF Log Detector
Preliminary Technical Data
AD8312
PrA 10/29/2004Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its u, nor for any infringements of patents or other rights of third parties that may result from its u. Specifications subject to change without notice. No licen is granted by implication or otherwi under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
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FEATURES
Complete RF Detector Function
Typical Range : −45 dBm to 0 dBm re 50 Ω Frequency Respon from 100 MHz to 2.7 GHz Temperature-Stable Linear-in-dB Respon Accurate to 2.7 GHz
Rapid Respon: 70 ns to a 10 dB Step Low Power: 12 mW at 2.7 V
APPLICATIONS
Cellular Handts (GSM, CDMA, WCDMA) RSSI and TSSI for Wireless Terminal Devices Transmitter Power Measurement
PRODUCT DESCRIPTION
The AD8312 is a complete low cost subsystem for the
measurement of RF signals in the frequency range of 100 MHz to 2.7 GHz, with a typical dynamic range of 45 dB, intended for u in a wide variety of cellular handts and other wireless devices. It provides a wider dynamic range and better accuracy than possible using discrete diode detectors. In particular, its temperature stability is excellent over the full operating range of −40°C to +85°C.
Its high nsitivity allows measurement at low power levels, thus reducing the amount of power that
needs to be coupled to the detector. It is esntially a voltage-responding device, with a typical signal range of 1.25 mV to 224 mV rms or −45 dBm to 0 dBm re 50 Ω.
For convenience, the signal is internally ac-coupled, using a 5 pF capacitor to a load of 3 kΩ in shunt with 2 pF. This high-pass coupling, with a corner at approximately 16 MHz,
determines the lowest operating frequency. Thus, the source may be dc-grounded.
The AD8312 output, called VOUT, increas from clo to ground to about 1.2 V as the input signal level increas from 1.25 mV to 224 mV . This output is intended for u in
measurement mode. Consult the Applications ction of this data sheet for information on u in this mode. A capacitor may
be connected between the VOUT and CFLT pins when it is desirable to increa the time interval over which averaging of the input waveform occurs.
The AD8312 is available in a 6-lead wafer-level chip scale
package, 1.0 mm x 1.5 mm, and consumes 4.5 mA from a 2.7 V to 5.5 V supply.
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
AD8312元宵节的英语
Preliminary Technical Data
Rev. PrA| Page 2 of 13
TABLE OF CONTENTS
3 Absolute 5 .
.................5 Pin Configuration and 6 Typical 7 General Description.. (10)
<11 11 .11 13 Ordering Guide.. (13)
Preliminary Technical Data
AD8312
Rev. PrA| Page 3 of 13
SPECIFICATIONS声母的笔顺
Table 1. V S = 3 V, C FLT = open, T A = 25°C, 52.3 Ω termination resistor at RFIN, unless otherwi noted.
Parameter
Conditions Min Typ Max Unit SIGNAL INPUT INTERFACE RFIN (Pin 6)
Specified Frequency Range 0.1 2.7 G H
z Input Voltage Range
Internally AC-Coupled 1.25 224 mV rms Equivalent Power Range 52.3 Ω External Termination –45 0 dBm DC Resistance to COMM 100 kΩ机智的英文
MEASUREMENT MODE
VOUT (Pin 2) shorted to VSET (Pin 3), Sinusoidal Input Signal
f = 0.1 GHz Input Impedance 3020 || 1.35 Ω || pF
± 1 dB Dynamic Range T A = +25°C
48 dB −40°C < T A < +85°C
40 dB Maximum Input Level ± 1 dB Error 2 dBm Minimum Input Level ± 1 dB Error
广西医科大学研究生
-
46 dBm Slope 21.0 mV/dB Intercept -50.4 dBm Output Voltage - High Power In P IN = –10 dBm 0.85 V Output Voltage - Low Power In P IN = –40 dBm 0.22 V Temperature Sensitivity P IN = –10 dBm
25°C ≤ T A ≤ +85°C
- 0.0002 dB/°C −40°C ≤ T A ≤ +25°C
- 0.0050 dB/°C f = 0.9 GHz Input Impedance 903 || 1.16 Ω || pF
± 1 dB Dynamic Range T A = +25°C
50 dB −40°C < T A < +85°C
40 dB Maximum Input Level ± 1 dB Error 2 dBm Minimum Input Level ± 1 dB Error
c1能开摩托车吗-48 dBm Slope 20.3 mV/dB Intercept -51.4 dBm Output Voltage - High Power In P IN = –10 dBm 0.839 V Output Voltage - Low Power In P IN = –40 dBm 0.226 V Temperature Sensitivity P IN = –10 dBm
25°C ≤ T A ≤ +85°C
- 0.0036 dB/°C –40°C ≤ T A ≤ +25°C
-0.0010 dB/°C f = 1.9 GHz Input Impedance 440 || 1.14 Ω || pF
± 1 dB Dynamic Range T A = +25°C
46 dB −40°C < T A < +85°C
38 dB Maximum Input Level ± 1 dB Error -3 dBm Minimum Input Level ± 1 dB Error
-49 dBm Slope 19.4 mV/dB Intercept -51.8 dBm Output Voltage - High Power In P IN = –10 dBm 0.815 V Output Voltage - Low Power In P IN = –40 dBm 0.229 V Temperature Sensitivity P IN = –10 dBm
25°C ≤ T A ≤ +85°C
-0.0044 dB/°C –40°C ≤ T A ≤ +25°C
何不忆江南-0.0027 dB/°C
AD8312
Preliminary Technical Data
Rev. PrA| Page 4 of 13
过春节的图片
Parameter Conditions Min
Typ
Max
Unit
f = 2.5 GHz
Input Impedance
365 || 1.1 Ω || pF ± 1 dB Dynamic Range T A = +25°C 44 dB −40°C < T A < +85°C 36 dB Maximum Input Level ± 1 dB Error -4 dBm Minimum Input Level ± 1 dB Error
吮痈舐痔-48 dBm Slope 18.85 mV/dB Intercept -51 dBm Output Voltage - High Power In P IN = –10 dBm 0.774 V Output Voltage - Low Power In P IN = –40 dBm 0.205 V Temperature Sensitivity P IN = –
10 dBm
25°C ≤ T A ≤ +85°C +0.0053 dB/°C –40°C ≤ T A ≤ +25°C -0.0047 dB/°C OUTPUT INTERFACE VOUT (Pin 2) Minimum Output Voltage No Signal at RFIN, R L ≥ 10 kΩ
0.02 V Maximum Output Voltage 1
R L ≥ 10 kΩ 2.2 V General Limit 2.7 V ≤ V S ≤ 5.5 V V S – 1 V Available Output Current Sourcing/Sinking 2/1 mA Residual RF (at 2f) f = 0.1 GHz (Worst Condition) 100 µV Output Noi RF Input = 2.2 GHz, –10 dBm, f NOISE = 100 kHz,
CFLT open
tbd uV/√Hz Fall Time Input Level = off to 0 dBm, 90% to 10% 120 ns Ri Time Input Level = 0 dBm to off, 10% to 90% 85 ns VSET INTERFACE VSET (Pin 3) Input Resistance 10 kΩ Bias Current Source RFIN = −10 dBm; VSET = 1.2V tbd µA POWER INTERFACE VPOS (Pin 1) Supply Voltage 2.7 3.0 5.5 V Quiescent Current
4.2 mA vs. Temperature
–40°C ≤ T A ≤ +85°C
4.3
mA
1
Incread output possible when using an attenuator between VOUT and VSET to rai the slope.
Preliminary Technical Data
AD8312
Rev. PrA| Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Value Supply Voltage VPOS 5.5 V VOUT, VSET 0 V, VPOS Input Voltage 1.6 V rms E
quivalent Power +17 dBm Internal Power Dissipation TBD mW θJA (WLCSP) TBD °C/W Maximum Junction Temperature 125°C Operating Temperature Range –40°C to +85°C Storage Temperature Range –65°C to +150°C Lead Temperature Range (Soldering 60 c) 260°C
Stress above tho listed under Absolute Maximum Ratings
may cau permanent damage to the device. This is a stress rating only; functional operation of the device at the or any other conditions above tho indicated in the operational ction of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION
ESD (electrostatic discharge) nsitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
