专利名称：Antifu structure with incread breakdown at edges
发明人：Kevin T. Look,Evert A. Wolsheimer
申请号：US08/132071
资管是什么意思>人民科技>优势同义词
申请日：19931004
公开号：US05475253A
3p3公开日：
19951212
专利内容由知识产权出版社提供
我很好英文>列兵万类霜天摘要：An antifu is provided which includes a first conductive layer, an antifu layer formed on the first conductive layer, and a cond conductive layer formed on the antifu layer. A portion of the antifu layer forms a substantially orthogonal angle with the first conductive layer and the cond conductive layer. This "corner" formation of the antifu enhances the electric field at this location during programming, thereby providing a predictable location for the filament, i. e. the conductive path between the first and cond conductive layers. This antifu provides other advantages including: a relatively low programming voltage, good step coverage for the antifu layer and the upper conductive layer, a low, stable resistance value, and minimal shearing effects on the filament.
申请人：XILINX, INC.
代理人：Jeanette S. Harms
罗氏虾的做法
更多信息请下载全文后查看
