专利名称：PUNCH-THROUGH SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING
SAME
清新淡雅图片发明人：RAHIMO, Munaf,KOPTA, Arnost,VOBECKY, Jan,JANISCH, Wolfgang
ps边缘模糊
申请号：EP10782226.4
怎么做淘宝客服>微信换行怎么打
申请日：20101110子墨子
公开号：EP2499672A2
公开日：
20120919
石门新居
专利内容由知识产权出版社提供
摘要：A maximum-punch-through miconductor device such as an insulated gate bipolar transistor (IGBT) or a diode, and a method for producing same are disclod. The MPT miconductor device can include at least a two-layer structure having an emitter metallization, a channel region, a ba layer with a predetermined doping concentration ND, a buffer layer and a collector metallization. A thickness W of the ba layer can be determined by: W = V bd + V pt 4010 kV cm - 5 / 8 * ( N D ) 1 / 8 wherein a punch-through voltage Vpt of the miconductor device is between 70% and 99% of a break down voltage Vbd of the miconductor device, and wherein the thickness W is a minimum thickness of the ba layer between a junction to the channel region and the buffer layer.
烤箱温度
申请人：ABB Technology AG
地址：Affolternstraße 44 8050 Zürich CH
国籍：CH
高尿酸饮食代理机构：ABB Patent Attorneys 更多信息请下载全文后查看
