山内一丰
专利名称：Semiconductor structure with incread
breakdown voltage and method for
producing the miconductor structure背影板书设计
发明人：Armin Tilke,Wolfgang Klein
神奇太空申请号：US10780276
申请日：20040217
公开号：US07001806B2
公开日：
贵州教育局
20060221
专利内容由知识产权出版社提供
专利附图：
摘要：A miconductor structure compris a buried first miconductor layer of a first doping type, a cond miconductor layer of the first doping type on the buried
金针菇肥牛的做法miconductor layer, which is less doped than the buried first miconductor layer, a miconductor area of a cond doping type on the cond miconductor layer, so that a pn junction is formed between the miconductor area and the cond miconductor layer, and a recess prent below the miconductor area in the buried first miconductor layer, which compris a miconductor material of the first doping type, which can be less doped than the buried first miconductor layer and has a larger distance to the miconductor area of the cond doping type on the cond miconductor layer, such that the breakdown voltage across the pn junction is higher than if the recess were not provided. Thereby, it is achieved that both a miconductor structure with a desired breakdown voltage as well as a further miconductor structure without this recess can be generated in the buried first miconductor layer with optimized HF properties.
可喜可贺申请人：Armin Tilke,Wolfgang Klein
蒙古斑地址：Dresden DE,Zorneding DE到底什么是爱情
国籍：DE,DE
代理机构：Maginot Moore & Beck
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